SI2309DS PDF and Equivalents Search

 

SI2309DS Specs and Replacement

Type Designator: SI2309DS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.5 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm

Package: SOT23

SI2309DS substitution

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SI2309DS datasheet

 ..1. Size:92K  vishay
si2309ds.pdf pdf_icon

SI2309DS

Si2309DS Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) ( )ID (A) Pb-free 0.340 at VGS = - 10 V - 1.25 Available - 60 0.550 at VGS = - 4.5 V - 1 RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2309DS (A9)* * Marking Code Ordering Information Si2309DS-T1 Si2309DS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless ot... See More ⇒

 ..2. Size:1712K  kexin
si2309ds.pdf pdf_icon

SI2309DS

SMD Type MOSFET P-Channel Enhancement MOSFET SI2309DS (KI2309DS) SOT-23 Unit mm +0.1 Features 2.9-0.1 +0.1 0.4 -0.1 VDS (V) =-60V 3 ID =-1.25 A (VGS =-10V) RDS(ON) 340m (VGS =-10V) RDS(ON) 550m (VGS =-4.5V) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Pa... See More ⇒

 ..3. Size:2087K  cn vbsemi
si2309ds.pdf pdf_icon

SI2309DS

SI2309DS www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.04 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 12 P-Channel Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 5.1 Dynamic dV/... See More ⇒

 0.1. Size:1754K  kexin
si2309ds-3.pdf pdf_icon

SI2309DS

SMD Type MOSFET P-Channel Enhancement MOSFET SI2309DS (KI2309DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-60V ID =-1.25 A (VGS =-10V) RDS(ON) 340m (VGS =-10V) 1 2 +0.02 +0.1 RDS(ON) 550m (VGS =-4.5V) 0.15 -0.02 0.95-0.1 +0.1 1.9-0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = ... See More ⇒

Detailed specifications: SPP100N08S2-07 , SPB100N08S2-07 , SST270 , SST271 , SPD35N10 , SPI70N10L , SPP70N10L , SPB70N10L , IRFB31N20D , MT3205 , BUZ78 , NVD2955 , J203 , J204 , SST201 , SST202 , SST203 .

Keywords - SI2309DS MOSFET specs

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