HUF76107P3 Datasheet. Specs and Replacement
Type Designator: HUF76107P3 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: TO220AB
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HUF76107P3 substitution
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HUF76107P3 datasheet
huf76107p3.pdf
HUF76107P3 Data Sheet October 1999 File Number 4382.5 20A, 30V, 0.052 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power 20A, 30V MOSFETs are manufactured using Ultra Low On-Resistance, rDS(ON) = 0.052 the innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model a... See More ⇒
huf76105sk8.pdf
HUF76105SK8 Data Sheet May 1999 File Number 4719.1 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 5.5A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050 UltraFET process. This advanced process technology achieves the Simulation Models lowest possible... See More ⇒
huf76105dk8.pdf
HUF76105DK8 TM Data Sheet June 2000 File Number 4380.6 5A, 30V, 0.050 Ohm, Dual N-Channel, Features Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 5A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050 UltraFET process. This advanced process technology achieves the Temperature Compensating... See More ⇒
Detailed specifications: HUF75639S3S, HUF75645P3, HUF75645S3S, HUF75652G3, HUF76105DK8, HUF76105SK8, HUF76107D3, HUF76107D3S, AO4468, HUF76113DK8, HUF76113SK8, HUF76113T3ST, HUF76121D3, HUF76121D3S, HUF76121P3, HUF76121S3S, HUF76121SK8
Keywords - HUF76107P3 MOSFET specs
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History: HUF76121D3S
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