All MOSFET. 2SK2367 Datasheet

 

2SK2367 Datasheet and Replacement


   Type Designator: 2SK2367
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 43 nC
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3P
 

 2SK2367 substitution

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2SK2367 Datasheet (PDF)

 ..1. Size:99K  nec
 2sk2367 2sk2368.pdf pdf_icon

2SK2367

DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2367/2SK2368SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor(in millimeter)designed for high voltage switching applications.4.7 MAX.15.7 MAX. 3.20.21.5FEATURES4 Low On-Resistance2SK2367: RDS (on) = 0.5 (VGS = 10 V, ID = 8.0 A)

 8.1. Size:86K  nec
 2sk2369 2sk2370.pdf pdf_icon

2SK2367

DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2369/2SK2370SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications. 3.0 0.2FEATURES4.7 MAX.15.7 MAX1.5 Low On-Resistance2SK2369: RDS(on) = 0.35 (VGS = 10 V, ID = 1

 8.2. Size:90K  nec
 2sk2359 2sk2360.pdf pdf_icon

2SK2367

DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2359/2SK2360SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel(in millimeters)MOS Field Effect Transistor designed for high voltage switchingapplications. 10.6 MAX. 4.8 MAX.3.6 0.21.3 0.210.0FEATURES Low On-Resistance42SK2359: RDS(o

 8.3. Size:85K  nec
 2sk2361 2sk2362.pdf pdf_icon

2SK2367

DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2361/2SK2362SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor(in millimeter)designed for high voltage switching applications.FEATURES 4.7 MAX.15.7 MAX. 3.20.21.5 Low On-Resistance42SK2361: RDS (on) = 0.9 (VGS = 10 V, ID = 5.0 A)

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Datasheet: 2SK266 , 2SK455 , 2SK456 , 2SK147 , IFN146 , 2SK2564 , 2SK1537 , 2SK2879-01 , IRF540N , 2SK2368 , LND150K1 , LND150N3 , LND150N8 , LND250 , FS5UM-5 , FS5VS-5 , FS5KM-5 .

Keywords - 2SK2367 MOSFET datasheet

 2SK2367 cross reference
 2SK2367 equivalent finder
 2SK2367 lookup
 2SK2367 substitution
 2SK2367 replacement

 

 
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