LND150K1 PDF and Equivalents Search

 

LND150K1 Specs and Replacement

Type Designator: LND150K1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.013 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 450 nS

Cossⓘ - Output Capacitance: 2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO236AB SOT23

LND150K1 substitution

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LND150K1 datasheet

 8.1. Size:621K  supertex
 lnd150.pdf pdf_icon

LND150K1

LND150 N-Channel Depletion-Mode DMOS FET Features General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertex s lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND1... See More ⇒

Detailed specifications: 2SK456, 2SK147, IFN146, 2SK2564, 2SK1537, 2SK2879-01, 2SK2367, 2SK2368, IRFP460, LND150N3, LND150N8, LND250, FS5UM-5, FS5VS-5, FS5KM-5, FS7UM-5, FS7VS-5

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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