LND150N8 Specs and Replacement
Type Designator: LND150N8
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 450 nS
Cossⓘ - Output Capacitance: 2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO243AA SOT89
LND150N8 substitution
- MOSFET ⓘ Cross-Reference Search
LND150N8 datasheet
lnd150.pdf
LND150 N-Channel Depletion-Mode DMOS FET Features General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertex s lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND1... See More ⇒
Detailed specifications: IFN146, 2SK2564, 2SK1537, 2SK2879-01, 2SK2367, 2SK2368, LND150K1, LND150N3, IRF640, LND250, FS5UM-5, FS5VS-5, FS5KM-5, FS7UM-5, FS7VS-5, FS7KM-5, FS10UM-5
Keywords - LND150N8 MOSFET specs
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