All MOSFET. LND150N8 Datasheet

 

LND150N8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LND150N8
   Marking Code: LN1E*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 450 nS
   Cossⓘ - Output Capacitance: 2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO243AA SOT89

 LND150N8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LND150N8 Datasheet (PDF)

 8.1. Size:621K  supertex
 lnd150.pdf

LND150N8 LND150N8

LND150N-Channel Depletion-ModeDMOS FETFeatures General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertexs lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND1

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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