FS10VS-6 Datasheet and Replacement
Type Designator: FS10VS-6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 10 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO220S
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FS10VS-6 Datasheet (PDF)
fs10vs-9a.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: 1N60G-TMS4-T | STD4NK60Z | KNB2710A | STD50N03L-1 | DH100P70E
Keywords - FS10VS-6 MOSFET datasheet
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History: 1N60G-TMS4-T | STD4NK60Z | KNB2710A | STD50N03L-1 | DH100P70E
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