HUF76121P3
MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF76121P3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Id|ⓘ - Maximum Drain Current: 47
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021
Ohm
Package:
TO220AB
HUF76121P3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF76121P3
Datasheet (PDF)
0.1. Size:114K intersil
huf76121p3-s3s.pdf
HUF76121P3, HUF76121S3SData Sheet September 1999 File Number 4392.847A, 30V, 0.021 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 47A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.021innovative UltraFET process.This advanced process technology Temperature Compensating PS
6.1. Size:160K fairchild semi
huf76121d3.pdf
HUF76121D3, HUF76121D3SData Sheet December 200120A, 30V, 0.023 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 20A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.023innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Modelac
6.2. Size:134K intersil
huf76121sk8.pdf
HUF76121SK8Data Sheet April 1999 File Number 47378A, 30V, 0.023 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 8A, 30Vmanufactured using the innovative Simulation ModelsUltraFET process. This advanced- Temperature Compensated PSPICE and SABERprocess technology achieves theElectrical Models
Datasheet: HUF76107D3
, HUF76107D3S
, HUF76107P3
, HUF76113DK8
, HUF76113SK8
, HUF76113T3ST
, HUF76121D3
, HUF76121D3S
, IRF840
, HUF76121S3S
, HUF76121SK8
, HUF76129D3
, HUF76129D3S
, HUF76129P3
, HUF76129S3S
, HUF76131SK8
, HUF76132P3
.