HUF76121P3 MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF76121P3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id|ⓘ - Maximum Drain Current: 47 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TO220AB
HUF76121P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF76121P3 Datasheet (PDF)
huf76121p3-s3s.pdf
HUF76121P3, HUF76121S3SData Sheet September 1999 File Number 4392.847A, 30V, 0.021 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 47A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.021innovative UltraFET process.This advanced process technology Temperature Compensating PS
huf76121d3.pdf
HUF76121D3, HUF76121D3SData Sheet December 200120A, 30V, 0.023 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 20A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.023innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Modelac
huf76121sk8.pdf
HUF76121SK8Data Sheet April 1999 File Number 47378A, 30V, 0.023 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 8A, 30Vmanufactured using the innovative Simulation ModelsUltraFET process. This advanced- Temperature Compensated PSPICE and SABERprocess technology achieves theElectrical Models
Datasheet: HUF76107D3 , HUF76107D3S , HUF76107P3 , HUF76113DK8 , HUF76113SK8 , HUF76113T3ST , HUF76121D3 , HUF76121D3S , 20N60 , HUF76121S3S , HUF76121SK8 , HUF76129D3 , HUF76129D3S , HUF76129P3 , HUF76129S3S , HUF76131SK8 , HUF76132P3 .
