HUF76121S3S Datasheet. Specs and Replacement
Type Designator: HUF76121S3S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TO263AB
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HUF76121S3S substitution
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HUF76121S3S datasheet
huf76121sk8.pdf
HUF76121SK8 Data Sheet April 1999 File Number 4737 8A, 30V, 0.023 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 8A, 30V manufactured using the innovative Simulation Models UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the Electrical Models ... See More ⇒
huf76121d3.pdf
HUF76121D3, HUF76121D3S Data Sheet December 2001 20A, 30V, 0.023 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 20A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.023 innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model ac... See More ⇒
huf76121p3-s3s.pdf
HUF76121P3, HUF76121S3S Data Sheet September 1999 File Number 4392.8 47A, 30V, 0.021 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 47A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.021 innovative UltraFET process. This advanced process technology Temperature Compensating PS... See More ⇒
Detailed specifications: HUF76107D3S, HUF76107P3, HUF76113DK8, HUF76113SK8, HUF76113T3ST, HUF76121D3, HUF76121D3S, HUF76121P3, IRF540N, HUF76121SK8, HUF76129D3, HUF76129D3S, HUF76129P3, HUF76129S3S, HUF76131SK8, HUF76132P3, HUF76132S3S
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