All MOSFET. FS10VS-9 Datasheet

 

FS10VS-9 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FS10VS-9
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 125 W
   Maximum Drain-Source Voltage |Vds|: 450 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Drain Current |Id|: 10 A
   Maximum Drain-Source On-State Resistance (Rds): 0.56 Ohm
   Package: TO220S

 FS10VS-9 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FS10VS-9 Datasheet (PDF)

 0.1. Size:218K  renesas
fs10vs-9a.pdf

FS10VS-9
FS10VS-9

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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