All MOSFET. 2SK3699-01MR Equivalents Search

 

2SK3699-01MR Spec and Replacement


   Type Designator: 2SK3699-01MR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm
   Package: TO220F

 2SK3699-01MR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3699-01MR Specs

 ..1. Size:103K  fuji
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2SK3699-01MR

2SK3699-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒

 ..2. Size:280K  inchange semiconductor
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2SK3699-01MR

isc N-Channel MOSFET Transistor 2SK3699-01MR FEATURES Drain Current I = 3.7A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 4.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒

 8.1. Size:170K  toshiba
2sk369.pdf pdf_icon

2SK3699-01MR

2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications Unit mm Suitable for use as first stage for equalizer and MC head amplifiers. High Y Y = 40 mS (typ.) (V = 10 V, V = 0, I = 5 mA) fs fs DS GS DSS High breakdown voltage V = -40 V (min) GDS Super low noise NF = 1.0dB (typ.) (V = 10... See More ⇒

 8.2. Size:110K  fuji
2sk3696-01mr.pdf pdf_icon

2SK3699-01MR

2SK3696-01MR 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C... See More ⇒

Detailed specifications: FS5KM-9 , FS10UM-9 , FS10VS-9 , FS10KM-9 , FS10SM-9 , 2SK3599-01MR , 2SK1506 , 2SK3538 , 10N65 , 2SK2171 , 2N5640 , FTP08N50 , FTA08N50 , STP16NE06 , STP16NE06FP , DMU4523D , DMD4523D .

History: SUP40N25-60 | ZVN3306FTC | UTM4052G-S08-R | ZVN4206ASTOB

Keywords - 2SK3699-01MR MOSFET specs

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