All MOSFET. HUF76129D3S Datasheet

 

HUF76129D3S Datasheet and Replacement


   Type Designator: HUF76129D3S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO252AA
 

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HUF76129D3S Datasheet (PDF)

 4.1. Size:116K  intersil
 huf76129d3-s.pdf pdf_icon

HUF76129D3S

HUF76129D3, HUF76129D3SData Sheet September 1999 File Number 4394.520A, 30V, 0.016 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 20A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016innovative UltraFET process.This advanced process technology Temperature Compensating PS

 6.1. Size:118K  intersil
 huf76129p3-s3s.pdf pdf_icon

HUF76129D3S

HUF76129P3, HUF76129S3SData Sheet September 1999 File Number 4395.656A, 30V, 0.016 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 56A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016innovative UltraFET process.This advanced process technology Temperature Compensating PS

 7.1. Size:160K  fairchild semi
 huf76121d3.pdf pdf_icon

HUF76129D3S

HUF76121D3, HUF76121D3SData Sheet December 200120A, 30V, 0.023 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 20A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.023innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Modelac

 7.2. Size:134K  intersil
 huf76121sk8.pdf pdf_icon

HUF76129D3S

HUF76121SK8Data Sheet April 1999 File Number 47378A, 30V, 0.023 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 8A, 30Vmanufactured using the innovative Simulation ModelsUltraFET process. This advanced- Temperature Compensated PSPICE and SABERprocess technology achieves theElectrical Models

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Datasheet: HUF76113SK8 , HUF76113T3ST , HUF76121D3 , HUF76121D3S , HUF76121P3 , HUF76121S3S , HUF76121SK8 , HUF76129D3 , IRF640 , HUF76129P3 , HUF76129S3S , HUF76131SK8 , HUF76132P3 , HUF76132S3S , HUF76132SK8 , HUF76137P3 , HUF76137S3S .

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