FTP07N60 Specs and Replacement
Type Designator: FTP07N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 102 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO220
FTP07N60 substitution
- MOSFET ⓘ Cross-Reference Search
FTP07N60 datasheet
ftp07n60 fta07n60.pdf
FTP07N60/FT A07N60 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 600V 1.1 7.0A Low Gate Charge (typical 38.6nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Information ... See More ⇒
Detailed specifications: DMZ6012E, FTE08N06G, FTE11N06G, FTF16N06G, FTP04N60A, FTA04N60A, FTP04N60B, FTA04N60B, 7N60, FTA07N60, FTU02N60B, FTD02N60B, FTU02N70, FTD02N70, FTU04N60A, FTD04N60A, FTU04N60B
Keywords - FTP07N60 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: FDB9406F085 | FS10SM-9
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