IRFS830B PDF and Equivalents Search

 

IRFS830B Specs and Replacement

Type Designator: IRFS830B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220F

IRFS830B substitution

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IRFS830B datasheet

 ..1. Size:888K  fairchild semi
 irf830b irfs830b.pdf pdf_icon

IRFS830B

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 7.1. Size:284K  1
 irfs830 irfs831.pdf pdf_icon

IRFS830B

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 7.2. Size:308K  1
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IRFS830B

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 7.3. Size:499K  samsung
 irfs830a.pdf pdf_icon

IRFS830B

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 1.169 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒

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Detailed specifications: FTD04N65C , FTU06N70C , FTD06N70C , 2SK1487 , SSP7N60B , SSS7N60B , SSM40N03P , IRF830B , IRF3205 , CLY2 , 2SK2369 , 2SK2370 , 2SK2357 , 2SK2358 , AOD436 , BSN304 , J309G .

Keywords - IRFS830B MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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