All MOSFET. IRFS830B Datasheet

 

IRFS830B MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFS830B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220F

 IRFS830B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFS830B Datasheet (PDF)

 ..1. Size:888K  fairchild semi
 irf830b irfs830b.pdf

IRFS830B IRFS830B

November 2001IRF830B/IRFS830B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tailored to

 7.1. Size:284K  1
 irfs830 irfs831.pdf

IRFS830B IRFS830B

 7.2. Size:308K  1
 irfs830 irfs831 irfs832 irfs833.pdf

IRFS830B IRFS830B

 7.3. Size:499K  samsung
 irfs830a.pdf

IRFS830B IRFS830B

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 1.169 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

 7.4. Size:930K  blue-rocket-elect
 irfs830.pdf

IRFS830B IRFS830B

IRFS830 Rev.E Dec.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency

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