All MOSFET. IRFS830B Datasheet

 

IRFS830B Datasheet and Replacement


   Type Designator: IRFS830B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220F
 

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IRFS830B Datasheet (PDF)

 ..1. Size:888K  fairchild semi
 irf830b irfs830b.pdf pdf_icon

IRFS830B

November 2001IRF830B/IRFS830B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tailored to

 7.1. Size:284K  1
 irfs830 irfs831.pdf pdf_icon

IRFS830B

 7.2. Size:308K  1
 irfs830 irfs831 irfs832 irfs833.pdf pdf_icon

IRFS830B

 7.3. Size:499K  samsung
 irfs830a.pdf pdf_icon

IRFS830B

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 1.169 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

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Datasheet: FTD04N65C , FTU06N70C , FTD06N70C , 2SK1487 , SSP7N60B , SSS7N60B , SSM40N03P , IRF830B , IRF3205 , CLY2 , 2SK2369 , 2SK2370 , 2SK2357 , 2SK2358 , AOD436 , BSN304 , J309G .

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