All MOSFET. SSF7509 Datasheet

 

SSF7509 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSF7509
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 165 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 93.6 nC
   trⓘ - Rise Time: 15.2 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220

 SSF7509 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSF7509 Datasheet (PDF)

 ..1. Size:392K  silikron
ssf7509.pdf

SSF7509 SSF7509

SSF7509 Feathers: ID=80A Advanced trench process technology BV=80V Special designed for Convertors and power controls Rdson=6.5m(Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7509 is a new generation of middle voltage and high current NChannel enhancement

 0.1. Size:482K  silikron
ssf7509b.pdf

SSF7509 SSF7509

SSF7509B Main Product Characteristics: VDSS 70V RDS(on) 5.3m(typ.) ID 100A Marking and Pi n TO-220 Schematic Diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.2. Size:396K  silikron
ssf7509a.pdf

SSF7509 SSF7509

SSF7509AMain Product Characteristics: VDSS 75V RDS(on) 6.5mohm(typ.)ID 80AMarking and pin D2PAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175

 0.3. Size:300K  silikron
ssf7509j7.pdf

SSF7509 SSF7509

SSF7509J7Main Product Characteristics: VDSS 80V RDS(on) 7.5mohm(typ.)ID 70AMarking and pin PQFN5*6Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBZM80N03 | AP2762R-A-HF | FDB2552 | IRFU111 | ME15N25-G | CS2N60U | APT5010JN

 

 
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