BR80N06 Datasheet and Replacement
Type Designator: BR80N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 84 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 84 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 540 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO220
BR80N06 substitution
BR80N06 Datasheet (PDF)
br80n06.pdf

BR80N06(BRCS80N06R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC
br80n08.pdf

BR80N08(BRCS80N08R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hig
br80n08a.pdf

BR80N08A Rev.C Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficienc
br80n10.pdf

BR80N10(BRCS80N10R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hig
Datasheet: BR4N60 , BR50N06 , BR50N10 , BR70N06 , BR75N08 , BR75N75 , BR7N60 , BR7N80 , AON7410 , BR80N08 , BR80N10 , BR80N75 , BR8205 , BR8N60 , BRA2N60 , BRA4N65 , BRA7N80 .
History: KHB9D0N50F1 | 2SK1436 | SI1013CX | 2SK2869-ZJ | CS4N60FA9R | SVF4N65FG | BR80N75
Keywords - BR80N06 MOSFET datasheet
BR80N06 cross reference
BR80N06 equivalent finder
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History: KHB9D0N50F1 | 2SK1436 | SI1013CX | 2SK2869-ZJ | CS4N60FA9R | SVF4N65FG | BR80N75



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