All MOSFET. AON6788 Datasheet

 

AON6788 Datasheet and Replacement


   Type Designator: AON6788
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DFN5X6
 

 AON6788 substitution

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AON6788 Datasheet (PDF)

 ..1. Size:268K  aosemi
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AON6788

AON678830V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON6788 uses advanced trench technology ID (at VGS=10V) 80Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 8.1. Size:268K  1
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AON6788

AON678630V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON6786 uses advanced trench technology ID (at VGS=10V) 85Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 8.2. Size:256K  aosemi
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AON6788

AON678030V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6780 uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is

 8.3. Size:255K  aosemi
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AON6788

AON678230V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6782 uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is

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Datasheet: BR80N08 , BR80N10 , BR80N75 , BR8205 , BR8N60 , BRA2N60 , BRA4N65 , BRA7N80 , IRF1407 , CS2N60 , CS2N60F , JCS2N60V , JCS2N60R , JCS2N60C , JCS2N60F , SI4963DY , BRB50N06 .

History: IRF3315SPBF

Keywords - AON6788 MOSFET datasheet

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