JCS2N60V
MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS2N60V
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 44
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8
V
|Id|ⓘ - Maximum Drain Current: 1.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15.3
nC
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 35
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5
Ohm
Package:
IPAK
JCS2N60V
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS2N60V
Datasheet (PDF)
..1. Size:1813K jilin sino
jcs2n60t jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf 
R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS l High efficiency switch l mode power supplies l l Electronic lamp ballasts l LED based on half bridge l LED power supplie FEATURES l Low gate c
..2. Size:1742K jilin sino
jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf
R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES
..4. Size:1443K jilin sino
jcs2n60r jcs2n60v jcs2n60c jcs2n60f.pdf
N RN-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max 5 Vgs=10V Qg 15.3 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES
7.1. Size:1199K jilin sino
jcs2n60.pdf
N lSX:_W:WHe^vfSO{ RN-CHANNEL MOSFET JCS2N60 ;NSpe MAIN CHARACTERISTICS \ Package ID 2.0 A VDSS 600 V Rdson 5 @Vgs=10VQg 15.3 nC APPLICATIONS (u l High frequency switching
7.2. Size:572K jilin sino
jcs2n60mb jcs2n60mfb.pdf
N RN-CHANNEL MOSFETJCS2N60MFB MAIN CHARACTERISTICS Package 2.0 A ID 600 V VDSS RdsonVgs=10V 5.0 6.0 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
7.3. Size:201K inchange semiconductor
jcs2n60f.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor JCS2N60FFEATURESLow gate chargeHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency switching mode power supplyElectronic ballastUPSABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
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