All MOSFET. JCS2N60F Datasheet

 

JCS2N60F MOSFET. Datasheet pdf. Equivalent

Type Designator: JCS2N60F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 23 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 35 pF

Maximum Drain-Source On-State Resistance (Rds): 5 Ohm

Package: TO220MF

JCS2N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

JCS2N60F PDF doc:

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JCS2N60F
JCS2N60F

N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS2N60 主要参数 MAIN CHARACTERISTICS 封装 Package ID 2.0 A VDSS 600 V Rdson 5 Ω (@Vgs=10V) Qg 15.3 nC APPLICATIONS 用途  High frequency switching  高频开关电源 mode power supply  电子镇流器  Electronic ballast  LED 电源  LED power supply 产品特性 FEATUR

Datasheet: BRA4N65 , BRA7N80 , AON6788 , CS2N60 , CS2N60F , JCS2N60V , JCS2N60R , JCS2N60C , IRFZ24N , SI4963DY , BRB50N06 , BRB7N60 , BRB7N65 , BRB7N80 , BRB80N06 , BRB80N08 , BRB80N10 .

 


JCS2N60F
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JCS2N60F
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