JCS2N60F MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS2N60F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 23 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 35 pF
Maximum Drain-Source On-State Resistance (Rds): 5 Ohm
Package: TO220MF
JCS2N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS2N60F PDF doc:
3.1. jcs2n60.pdf 
Size:1199K _jilin_sino
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS2N60 主要参数 MAIN CHARACTERISTICS 封装 Package ID 2.0 A VDSS 600 V Rdson 5 Ω （@Vgs=10V） Qg 15.3 nC APPLICATIONS 用途 High frequency switching 高频开关电源 mode power supply 电子镇流器 Electronic ballast LED 电源 LED power supply 产品特性 FEATUR
Datasheet: BRA4N65 , BRA7N80 , AON6788 , CS2N60 , CS2N60F , JCS2N60V , JCS2N60R , JCS2N60C , IRFZ24N , SI4963DY , BRB50N06 , BRB7N60 , BRB7N65 , BRB7N80 , BRB80N06 , BRB80N08 , BRB80N10 .
