BRB7N65 Specs and Replacement
Type Designator: BRB7N65
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO263
BRB7N65 substitution
- MOSFET ⓘ Cross-Reference Search
BRB7N65 datasheet
brb7n65.pdf
BRB7N65(BRCS7N65B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high... See More ⇒
brb7n60.pdf
BRB7N60(3BRCS7N60CB) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi... See More ⇒
brb7n80.pdf
BRB7N80(BRCS7N80B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high... See More ⇒
Detailed specifications: CS2N60F , JCS2N60V , JCS2N60R , JCS2N60C , JCS2N60F , SI4963DY , BRB50N06 , BRB7N60 , BS170 , BRB7N80 , BRB80N06 , BRB80N08 , BRB80N10 , BRD15P06 , BRD17N10 , BRD18N06 , BRD18P06 .
Keywords - BRB7N65 MOSFET specs
BRB7N65 cross reference
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BRB7N65 replacement
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