BRB80N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: BRB80N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 84 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 84 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 17 nS
Drain-Source Capacitance (Cd): 540 pF
Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
Package: TO263
BRB80N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRB80N06 Datasheet (PDF)
1.1. brb80n06.pdf 
Size:1667K _blue-rocket-elect
BRB80N06(BRCS80N06B) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-263 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features R 小，门电荷低，C 小，开关速度快。 DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching. 用途 / Applications 用于低压电路如：汽车电路、DC/DC 转换、便携
3.1. brb80n08.pdf Size:751K _blue-rocket-elect
BRB80N08(BRCS80N08B) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-263 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi
4.1. brb80n10.pdf Size:881K _blue-rocket-elect
BRB80N10(BRCS80N10B) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-263 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi
Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .
LIST
Last Update
MOSFET: CHM1012TGP | CHM1012PAGP | CHM1012LPAGP | CHM09N7NGP | CHM09N6NGP | CHM06N5NGP | CHM05P03NGP | CHM05N65PAGP | CHM04N6NGP | CHM0410JGP | CHM02N7PAGP | CHM02N7NGP | CHM02N6PAGP | CHM02N6GPAGP | CHM02N6ANGP |