All MOSFET. BRB80N06 Datasheet

 

BRB80N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: BRB80N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 84 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 84 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 540 pF

Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm

Package: TO263

BRB80N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BRB80N06 Datasheet (PDF)

1.1. brb80n06.pdf Size:1667K _blue-rocket-elect

BRB80N06
BRB80N06

BRB80N06(BRCS80N06B) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-263 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features R 小,门电荷低,C 小,开关速度快。 DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching. 用途 / Applications 用于低压电路如:汽车电路、DC/DC 转换、便携

3.1. brb80n08.pdf Size:751K _blue-rocket-elect

BRB80N06
BRB80N06

BRB80N08(BRCS80N08B) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-263 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi

4.1. brb80n10.pdf Size:881K _blue-rocket-elect

BRB80N06
BRB80N06

BRB80N10(BRCS80N10B) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-263 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi

Datasheet: JCS2N60R , JCS2N60C , JCS2N60F , SI4963DY , BRB50N06 , BRB7N60 , BRB7N65 , BRB7N80 , BF245C , BRB80N08 , BRB80N10 , BRD15P06 , BRD17N10 , BRD18N06 , BRD18P06 , BRD1N60 , BRD20N03 .

 


BRB80N06
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  BRB80N06
 
BRB80N06
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  BRB80N06
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