BRB80N08 Datasheet and Replacement
Type Designator: BRB80N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 165 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 17.8 nS
Cossⓘ - Output Capacitance: 330 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO263
BRB80N08 Datasheet (PDF)
brb80n08.pdf

BRB80N08(BRCS80N08B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi
brb80n08a.pdf

BRB80N08A Rev.C Jun.-2019 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. Halogen-free Product. / Applications DC/DC These devi
brb80n06.pdf

BRB80N06(BRCS80N06B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC
brb80n10.pdf

BRB80N10(BRCS80N10B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: CSD17313Q2 | BF1212 | TSM9N90CZ | 2SK4065-DL-1E | CHM2313QGP | IRFP250PBF | R6004JND3
Keywords - BRB80N08 MOSFET datasheet
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History: CSD17313Q2 | BF1212 | TSM9N90CZ | 2SK4065-DL-1E | CHM2313QGP | IRFP250PBF | R6004JND3



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