BRD5N60
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRD5N60
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 42
nS
Cossⓘ -
Output Capacitance: 55
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5
Ohm
Package:
TO252
BRD5N60
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRD5N60
Datasheet (PDF)
..1. Size:688K blue-rocket-elect
brd5n60.pdf 
BRD5N60(BRCS5N60D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high
8.1. Size:688K blue-rocket-elect
brd5n65.pdf
BRD5N65 Rev.A Sep.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency
9.1. Size:979K blue-rocket-elect
brd5n50.pdf
BRD5N50Rev.D May.-2016 DATA SHEET / DescriptionsTO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency switching
9.2. Size:1949K blue-rocket-elect
brd5n20.pdf
BRD5N20 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features 100%Low gate charge, low Rdson, fast switching, Low Reverse transfer capacitances,100% Single Pulse
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.
