HUF76139S3S Datasheet. Specs and Replacement

Type Designator: HUF76139S3S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 165 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO263AB

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HUF76139S3S datasheet

 6.1. Size:121K  intersil
huf76139.pdf pdf_icon

HUF76139S3S

HUF76139P3, HUF76139S3S Data Sheet September 1999 File Number 4399.5 75A, 30V, 0.0075 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0075 innovative UltraFET process. This advanced process technology Temperature Compensating ... See More ⇒

 7.1. Size:223K  fairchild semi
huf76132p3-s3s.pdf pdf_icon

HUF76139S3S

HUF76132P3, HUF76132S3S Data Sheet January 2003 75A, 30V, 0.011 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.011 innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model achie... See More ⇒

 7.2. Size:263K  fairchild semi
huf76132sk8.pdf pdf_icon

HUF76139S3S

HUF76132SK8 Data Sheet January 2003 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 11.5A, 30V manufactured using the innovative Simulation Models UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the Electrical Models l... See More ⇒

 7.3. Size:256K  fairchild semi
huf76131sk8.pdf pdf_icon

HUF76139S3S

HUF76131SK8 Data Sheet January 2003 10A, 30V, 0.013 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 10A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.013 UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Model lowes... See More ⇒

Detailed specifications: HUF76129S3S, HUF76131SK8, HUF76132P3, HUF76132S3S, HUF76132SK8, HUF76137P3, HUF76137S3S, HUF76139P3, IRF3710, HUF76143P3, HUF76143S3S, HUF76145P3, HUF76145S3S, HUF76407D3, HUF76407D3S, HUF76407DK8, HUF76407P3

Keywords - HUF76139S3S MOSFET specs

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