HUF76139S3S
MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF76139S3S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 165
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075
Ohm
Package:
TO263AB
HUF76139S3S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF76139S3S
Datasheet (PDF)
6.1. Size:121K intersil
huf76139.pdf 
HUF76139P3, HUF76139S3SData Sheet September 1999 File Number 4399.575A, 30V, 0.0075 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0075innovative UltraFET process.This advanced process technology Temperature Compensating
7.1. Size:223K fairchild semi
huf76132p3-s3s.pdf
HUF76132P3, HUF76132S3SData Sheet January 200375A, 30V, 0.011 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.011innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Modelachie
7.2. Size:263K fairchild semi
huf76132sk8.pdf
HUF76132SK8Data Sheet January 200311.5A, 30V, 0.0115 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 11.5A, 30Vmanufactured using the innovative Simulation ModelsUltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the Electrical Modelsl
7.3. Size:256K fairchild semi
huf76131sk8.pdf
HUF76131SK8Data Sheet January 200310A, 30V, 0.013 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 10A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.013UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Modellowes
7.4. Size:118K intersil
huf76137p3.pdf
HUF76137P3, HUF76137S3SData Sheet September 1999 File Number 4398.675A, 30V, 0.009 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.009innovative UltraFET process.This advanced process technology Temperature Compensating PS
Datasheet: HUF76129S3S
, HUF76131SK8
, HUF76132P3
, HUF76132S3S
, HUF76132SK8
, HUF76137P3
, HUF76137S3S
, HUF76139P3
, IRFB4110
, HUF76143P3
, HUF76143S3S
, HUF76145P3
, HUF76145S3S
, HUF76407D3
, HUF76407D3S
, HUF76407DK8
, HUF76407P3
.
