All MOSFET. HUF76139S3S Datasheet

 

HUF76139S3S Datasheet and Replacement


   Type Designator: HUF76139S3S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 165 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO263AB
 

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HUF76139S3S Datasheet (PDF)

 6.1. Size:121K  intersil
 huf76139.pdf pdf_icon

HUF76139S3S

HUF76139P3, HUF76139S3SData Sheet September 1999 File Number 4399.575A, 30V, 0.0075 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0075innovative UltraFET process.This advanced process technology Temperature Compensating

 7.1. Size:223K  fairchild semi
 huf76132p3-s3s.pdf pdf_icon

HUF76139S3S

HUF76132P3, HUF76132S3SData Sheet January 200375A, 30V, 0.011 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.011innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Modelachie

 7.2. Size:263K  fairchild semi
 huf76132sk8.pdf pdf_icon

HUF76139S3S

HUF76132SK8Data Sheet January 200311.5A, 30V, 0.0115 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 11.5A, 30Vmanufactured using the innovative Simulation ModelsUltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the Electrical Modelsl

 7.3. Size:256K  fairchild semi
 huf76131sk8.pdf pdf_icon

HUF76139S3S

HUF76131SK8Data Sheet January 200310A, 30V, 0.013 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 10A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.013UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Modellowes

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Datasheet: HUF76129S3S , HUF76131SK8 , HUF76132P3 , HUF76132S3S , HUF76132SK8 , HUF76137P3 , HUF76137S3S , HUF76139P3 , IRFB4115 , HUF76143P3 , HUF76143S3S , HUF76145P3 , HUF76145S3S , HUF76407D3 , HUF76407D3S , HUF76407DK8 , HUF76407P3 .

History: IXTY1R6N50P

Keywords - HUF76139S3S MOSFET datasheet

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