BRD70N03 Datasheet and Replacement
Type Designator: BRD70N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 62.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1.3 nS
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO252
BRD70N03 substitution
BRD70N03 Datasheet (PDF)
brd70n03.pdf
BRD70N03 Rev.E Dec.-2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Super high dense cell design for low RDS(on),Rugged and reliable,surface mount package. / Applications DC/
brd70n08.pdf
BRD70N08 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficienc
brd7002k2.pdf
BRD7002K2 Rev.J Jan.-2024 DATA SHEET / Descriptions SOT-363 N MOS Double N-CHANNEL MOSFET in a SOT-363 Plastic Package. / Features Sensitive gate trigger current and Low Holding current,ESD protected diode, HF Product.
brd7002k1.pdf
BRD7002K1 Rev.C Oct.-2021 DATA SHEET / Descriptions SOT-363 N MOS Double N-CHANNEL MOSFET in a SOT-363 Plastic Package. / Features Sensitive gate trigger current and Low Holding current.ESD protected diode. HF product.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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