BRF4N80 MOSFET. Datasheet pdf. Equivalent
Type Designator: BRF4N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 110 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 100 pF
Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm
Package: TO220FL
BRF4N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRF4N80 Datasheet (PDF)
1.1. brf4n80.pdf 
Size:1028K _blue-rocket-elect
BRF4N80(BRCS4N80FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 开关速度快，低导通电阻，低栅极电荷，低反向传输电容。 Fast switching, low on resistance, low gate charge, low reverse transfer capacitances. 用途 / Applications 用于
5.1. brf4n60.pdf Size:745K _blue-rocket-elect
BRF4N60(BRCS4N60F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi
5.2. brf4n65.pdf Size:744K _blue-rocket-elect
BRF4N65(BRCS4N65F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
