All MOSFET. BRF4N80 Datasheet

 

BRF4N80 MOSFET. Datasheet pdf. Equivalent

Type Designator: BRF4N80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 100 pF

Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm

Package: TO220FL

BRF4N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BRF4N80 Datasheet (PDF)

1.1. brf4n80.pdf Size:1028K _blue-rocket-elect

BRF4N80 BRF4N80

BRF4N80(BRCS4N80FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 开关速度快，低导通电阻，低栅极电荷，低反向传输电容。 Fast switching, low on resistance, low gate charge, low reverse transfer capacitances. 用途 / Applications 用于

5.1. brf4n65.pdf Size:744K _blue-rocket-elect

BRF4N80 BRF4N80

BRF4N65(BRCS4N65F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi

5.2. brf4n60.pdf Size:745K _blue-rocket-elect

BRF4N80 BRF4N80

BRF4N60(BRCS4N60F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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