HUF76145S3S Datasheet. Specs and Replacement

Type Designator: HUF76145S3S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 270 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO263AB

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HUF76145S3S datasheet

 4.1. Size:300K  fairchild semi
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HUF76145S3S

HUF76145P3, HUF76145S3, HUF76145S3S Data Sheet December 2003 75A, 30V, 0.0045 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0045 innovative UltraFET process. Temperature Compensating PSPICE Model This advanced process t... See More ⇒

 6.1. Size:225K  fairchild semi
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HUF76145S3S

HUF76145P3, HUF76145S3S Data Sheet December 2001 75A, 30V, 0.0045 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0045 innovative UltraFET process. Temperature Compensating PSPICE Model This advanced process technology ... See More ⇒

 7.1. Size:109K  intersil
huf76143.pdf pdf_icon

HUF76145S3S

HUF76143P3, HUF76143S3S Data Sheet September 1999 File Number 4400.7 75A, 30V, 0.0055 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0055 innovative UltraFET process. This advanced process technology Temperature Compensating ... See More ⇒

Detailed specifications: HUF76132SK8, HUF76137P3, HUF76137S3S, HUF76139P3, HUF76139S3S, HUF76143P3, HUF76143S3S, HUF76145P3, 2N7000, HUF76407D3, HUF76407D3S, HUF76407DK8, HUF76407P3, HUF76409D3, HUF76409D3S, HUF76409P3, HUF76413D3

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