HUF76407D3S
MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF76407D3S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 38
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.4
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.107
Ohm
Package:
TO252AA
HUF76407D3S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF76407D3S
Datasheet (PDF)
..1. Size:234K fairchild semi
huf76407d3 huf76407d3s.pdf 
HUF76407D3, HUF76407D3SData Sheet December 200111A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN DRAINSOURCE Ultra Low On-Resistance (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.092, VGS = 10V- rDS(ON) = 0.107, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and
..2. Size:792K onsemi
huf76407d3s.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.1. Size:149K fairchild semi
huf76407d3st.pdf
HUF76407D3, HUF76407D3SData Sheet December 200111A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN DRAINSOURCE Ultra Low On-Resistance (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.092, VGS = 10V- rDS(ON) = 0.107, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and
5.1. Size:266K fairchild semi
huf76407dk8.pdf
HUF76407DK8Data Sheet December 20013.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC MS-012AA Ultra Low On-ResistanceBRANDING DASH- rDS(ON) = 0.090, VGS = 10V- rDS(ON) = 0.105, VGS = 5V Simulation Models5- Temperature Compensated PSPICE and SABER Electrical Models12- SPICE and SABER Thermal Impedanc
5.2. Size:542K fairchild semi
huf76407dk f085.pdf
HUFA76407DK8T_F085Data Sheet October 20103.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETFeaturesPackagingJEDEC MS-012AA Ultra Low On-Resistance- rDS(ON) = 0.090, VGS = 10VBRANDING DASH- rDS(ON) = 0.105, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER 5Electrical Models- SPICE and SABER Thermal Impedance
Datasheet: HUF76137S3S
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