BRS1N60 Specs and Replacement
Type Designator: BRS1N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
Package: TO92
BRS1N60 substitution
- MOSFET ⓘ Cross-Reference Search
BRS1N60 datasheet
brs1n60.pdf
BRS1N60(CS1N60S) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25... See More ⇒
brs1n80.pdf
BRS1N80(CS1N80S) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25 ... See More ⇒
brs1n70.pdf
BRS1N70(CS1N70S) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25 ... See More ⇒
Detailed specifications: BRI5N50, BRI5N60, BRI630, BRI6N70, BRI70N03, BRL2N60, BRM501D, BRP50N20, SPP20N60C3, BRS1N70, BRS1N80, BRS3N25, BRU20N50, IRFB830, IRFH3205, SI2306, VTI630
Keywords - BRS1N60 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: BS250CSM4
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