All MOSFET. HUF76407P3 Datasheet

 

HUF76407P3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HUF76407P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.3 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.107 Ohm
   Package: TO220AB

 HUF76407P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HUF76407P3 Datasheet (PDF)

 ..1. Size:214K  fairchild semi
 huf76407p3.pdf

HUF76407P3 HUF76407P3

HUF76407P3Data Sheet December 200112A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220ABFeatures Ultra Low On-ResistanceSOURCEDRAIN - rDS(ON) = 0.092, VGS = 10VGATE- rDS(ON) = 0.107, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and SABER Thermal Impedance Mo

 6.1. Size:149K  fairchild semi
 huf76407d3st.pdf

HUF76407P3 HUF76407P3

HUF76407D3, HUF76407D3SData Sheet December 200111A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN DRAINSOURCE Ultra Low On-Resistance (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.092, VGS = 10V- rDS(ON) = 0.107, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and

 6.2. Size:266K  fairchild semi
 huf76407dk8.pdf

HUF76407P3 HUF76407P3

HUF76407DK8Data Sheet December 20013.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC MS-012AA Ultra Low On-ResistanceBRANDING DASH- rDS(ON) = 0.090, VGS = 10V- rDS(ON) = 0.105, VGS = 5V Simulation Models5- Temperature Compensated PSPICE and SABER Electrical Models12- SPICE and SABER Thermal Impedanc

 6.3. Size:542K  fairchild semi
 huf76407dk f085.pdf

HUF76407P3 HUF76407P3

HUFA76407DK8T_F085Data Sheet October 20103.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETFeaturesPackagingJEDEC MS-012AA Ultra Low On-Resistance- rDS(ON) = 0.090, VGS = 10VBRANDING DASH- rDS(ON) = 0.105, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER 5Electrical Models- SPICE and SABER Thermal Impedance

 6.4. Size:234K  fairchild semi
 huf76407d3 huf76407d3s.pdf

HUF76407P3 HUF76407P3

HUF76407D3, HUF76407D3SData Sheet December 200111A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN DRAINSOURCE Ultra Low On-Resistance (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.092, VGS = 10V- rDS(ON) = 0.107, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and

 6.5. Size:792K  onsemi
 huf76407d3s.pdf

HUF76407P3 HUF76407P3

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: HUF76139S3S , HUF76143P3 , HUF76143S3S , HUF76145P3 , HUF76145S3S , HUF76407D3 , HUF76407D3S , HUF76407DK8 , K3569 , HUF76409D3 , HUF76409D3S , HUF76409P3 , HUF76413D3 , HUF76413D3S , HUF76413P3 , HUF76419D3 , HUF76419D3S .

 

 
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