2SK1036
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1036
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 340
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3
Ohm
Package:
TO220FP
2SK1036
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1036
Datasheet (PDF)
..1. Size:33K panasonic
2sk1036.pdf 
Power F-MOS FETs 2SK10362SK1036Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on)= 0.23(typ)5.5 0.2 2.7 0.2High-speed switching : tf = 80ns(typ)No secondary breakdown3.1 0.1 ApplicationsDC-DC converter1.3 0.2Non-contact relay1.4 0.1Solenoid drive+0.20.5 -0.1 0.8 0.1Motor drive2.54 0.
8.1. Size:34K panasonic
2sk1033.pdf
Power F-MOS FETs 2SK10332SK1033Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on) = 0.45(typ)5.5 0.2 2.7 0.2High-speed switching : tf =180ns(typ)No secondary breakdown3.1 0.1Low-voltage drive ApplicationsDC-DC converter1.3 0.21.4 0.1Non-contact relay+0.20.5 -0.1Solenoid drive0.8 0.1Mot
8.2. Size:35K panasonic
2sk1035.pdf
Power F-MOS FETs 2SK10352SK1035Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on)= 0.2(typ)5.5 0.2 2.7 0.2High-speed switching : tf = 100ns(typ)No secondary breakdown3.1 0.1Low-voltage drive ApplicationsDC-DC converter 1.3 0.21.4 0.1Non-contact relay+0.20.5 -0.1Solenoid drive0.8 0.1Motor
8.5. Size:61K inchange semiconductor
2sk1039.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1039 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- : VDSS=400V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400 V DSS GSV Gate-Source Volta
8.6. Size:61K inchange semiconductor
2sk1038.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1038 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- : VDSS=400V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400 V DSS GSV Gate-Source Volta
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