2SK1214 Datasheet and Replacement

Power F-MOS FETs 2SK12142SK1214Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on)1= 0.06(typ)5.5 0.2 2.7 0.2High-speed switching : tf =110ns(typ)No secondary breakdown3.1 0.1Low-voltage drive ApplicationsDC-DC converter1.3 0.21.4 0.1Non-contact relay+0.20.5 -0.1Solenoid drive0.8 0.1Mot

2SK1215 Silicon N-Channel MOS FET REJ03G0813-0200 (Previous ADE-208-1176) Rev.2.00 Aug.10.2005 Application VHF amplifier Outline RENESAS Package code: PTSP0003ZA-A(Package name: CMPAK R )31. Gate2. Drain13. Source2*CMPAK is a trademark of Renesas Technology Corp. Rev.2.00 Aug 10, 2005 page 1 of 5 2SK1215 Absolute Maximum Ratings (Ta = 25C) Item Sym

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1211 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltag

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1217 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- : VDSS=900V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 900 V

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1213 DESCRIPTION Drain Current ID=6A@ TC=25 Drain Source Voltage- : VDSS=600V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V

isc N-Channel MOSFET Transistor 2SK1211DESCRIPTIONDrain Current I =2.5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

isc N-Channel MOSFET Transistor 2SK1212DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Volta