HUF76409D3
MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF76409D3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 49
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Id|ⓘ - Maximum Drain Current: 17
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.071
Ohm
Package:
TO251AA
HUF76409D3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF76409D3
Datasheet (PDF)
0.1. Size:211K fairchild semi
huf76409d3-s.pdf 
HUF76409D3, HUF76409D3SData Sheet December 200117A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance- rDS(ON) = 0.063, VGS = 10VDRAINDRAINSOURCE (FLANGE) (FLANGE)- rDS(ON) = 0.071, VGS = 5VDRAINGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER
6.1. Size:111K intersil
huf76409p3.pdf
HUF76409P3Data Sheet November 1999 File Number 4666.117A, 60V, 0.070 Ohm, N-Channel, LogicLevel UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB Ultra Low On-Resistance- rDS(ON) = 0.062, VGS = 10VSOURCE- rDS(ON) = 0.070, VGS = 5VDRAINGATE Simulation Models- Temperature Compensated PSPICE and SABERElectrical Models- Spice and SABER Thermal Im
7.1. Size:149K fairchild semi
huf76407d3st.pdf
HUF76407D3, HUF76407D3SData Sheet December 200111A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN DRAINSOURCE Ultra Low On-Resistance (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.092, VGS = 10V- rDS(ON) = 0.107, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and
7.2. Size:266K fairchild semi
huf76407dk8.pdf
HUF76407DK8Data Sheet December 20013.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC MS-012AA Ultra Low On-ResistanceBRANDING DASH- rDS(ON) = 0.090, VGS = 10V- rDS(ON) = 0.105, VGS = 5V Simulation Models5- Temperature Compensated PSPICE and SABER Electrical Models12- SPICE and SABER Thermal Impedanc
7.3. Size:214K fairchild semi
huf76407p3.pdf
HUF76407P3Data Sheet December 200112A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220ABFeatures Ultra Low On-ResistanceSOURCEDRAIN - rDS(ON) = 0.092, VGS = 10VGATE- rDS(ON) = 0.107, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and SABER Thermal Impedance Mo
7.4. Size:542K fairchild semi
huf76407dk f085.pdf
HUFA76407DK8T_F085Data Sheet October 20103.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETFeaturesPackagingJEDEC MS-012AA Ultra Low On-Resistance- rDS(ON) = 0.090, VGS = 10VBRANDING DASH- rDS(ON) = 0.105, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER 5Electrical Models- SPICE and SABER Thermal Impedance
7.5. Size:234K fairchild semi
huf76407d3 huf76407d3s.pdf
HUF76407D3, HUF76407D3SData Sheet December 200111A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN DRAINSOURCE Ultra Low On-Resistance (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.092, VGS = 10V- rDS(ON) = 0.107, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and
7.6. Size:792K onsemi
huf76407d3s.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: HUF76143P3
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