All MOSFET. 2SK3020 Datasheet

 

2SK3020 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3020

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 24 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 280 nS

Drain-Source Capacitance (Cd): 380 pF

Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm

Package: TP

2SK3020 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3020 Datasheet (PDF)

1.1. 2sk3020.pdf Size:177K _sanyo

2SK3020
2SK3020

Ordering number:ENN6229 N-Channel Silicon MOSFET 2SK3020 DC/DC Converter Applications Features Package Dimensions Low ON resistance. unit:mm 4V drive. 2083B [2SK3020] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SK3020] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 : Gate 0 to 0.2 2

4.1. 2sk3022.pdf Size:172K _update

2SK3020
2SK3020

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3022 Silicon N-channel power MOSFET ■ Features ■ Package • Avalanche energy capability guaranteed • Code • High-speed switching U-G2 • Low ON resistance Ron • Pin Name • No secondary breakdown 1: Gate • Low-voltage drive 2: Drain • High electrostatic energy capability 3: Source

4.2. 2sk302.pdf Size:206K _toshiba

2SK3020
2SK3020

2SK302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 FM Tuner, VHF RF Amplifier Applications Unit: mm Low reverse transfer capacitance: Crss = 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: G = 28dB (typ.) ps Recommend operation voltage: 5~15 V Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Drain-sourc

4.3. 2sk3021.pdf Size:151K _sanyo

2SK3020
2SK3020

Ordering number:ENN6230 N-Channel Silicon MOSFET 2SK3021 DC/DC Converter Applications Features Package Dimensions Low ON-resistance. unit:mm 4V drive. 2083B [2SK3021] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SK3021] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 : Gate 0 to 0.2 2

4.4. 2sk3024.pdf Size:54K _panasonic

2SK3020
2SK3020

Power F-MOS FETs 2SK3024 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit: mm Low ON-resistance 6.5±0.1 2.3±0.1 No secondary breakdown 5.3±0.1 4.35±0.1 Low-voltage drive 0.5±0.1 High electrostatic breakdown voltage Applications Contactless relay 1.0±0.1 Diving circuit for a solenoid 0.1±0.05 2 0.5±0.1

4.5. 2sk3025.pdf Size:179K _panasonic

2SK3020
2SK3020

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOS FETs 2SK3025 Silicon N-channel power MOS FET ¦ Features ¦ Package • Code • Avalanche energy capability guaranteed • High-speed switching U-DL • Low ON resistance Ron • Pin Name • No secondary breakdown 1: Gate • Low-voltage drive 2: Drain • High electrostatic energy

4.6. 2sk3024-z.pdf Size:461K _kexin

2SK3020

SMD Type MOSFET N-Channel MOSFET 2SK3024-Z TO-252 Unit: mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 +0.8 -0.2 ■ Features -0.7 ● VDS (V) = 60V ● ID = 20 A (VGS = 10V) 0.127 ● RDS(ON) < 50mΩ (VGS = 10V) 0.80+0.1 max -0.1 D ● RDS(ON) < 70mΩ (VGS = 4V) G ● Switching power supply 1 Gate 2.3 0.60+ 0.1 - 0.1 +0.15 4.60 -0.15 2 Drain S 3 Source

Datasheet: 2SK1237 , 2SK1238 , 2SK1239 , 2SK1255 , 2SK1259 , 2SK1266 , 2SK1267 , 2SJ146 , IRFP260M , 2SK3021 , 2SK3065 , 2SK3092 , 2SK3119 , 2SK3120 , 2SK3121 , 2SK3122 , 2SK3278 .

 


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