HUF76419D3 Datasheet. Specs and Replacement

Type Designator: HUF76419D3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm

Package: TO251AA

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HUF76419D3 datasheet

 0.1. Size:196K  fairchild semi
 huf76419d3st.pdf pdf_icon

HUF76419D3

HUF76419D3, HUF76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER G... See More ⇒

 0.2. Size:197K  fairchild semi
 huf76419d3s.pdf pdf_icon

HUF76419D3

HUF76419D3, HUF76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER G... See More ⇒

 6.1. Size:321K  fairchild semi
 huf76419s f085.pdf pdf_icon

HUF76419D3

April 2013 HUF76419S3ST_F085 N-Channel Power Trench MOSFET 60V, 29A, 35m D D Features Typ rDS(on) = 26.7m at VGS = 10V, ID = 29A Typ Qg(tot) = 23.7nC at VGS = 10V, ID = 29A G UIS Capability RoHS Compliant G S Qualified to AEC Q101 TO-263AB S MOSFET Maximum Ratings TJ = 25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 60 V ... See More ⇒

 6.2. Size:213K  fairchild semi
 huf76419s3st.pdf pdf_icon

HUF76419D3

HUF76419P3, HUF76419S3S Data Sheet December 2001 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.035 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.040 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect... See More ⇒

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Detailed specifications: HUF76407DK8, HUF76407P3, HUF76409D3, HUF76409D3S, HUF76409P3, HUF76413D3, HUF76413D3S, HUF76413P3, IRF9540N, HUF76419D3S, HUF76419P3, HUF76419S3S, HUF76423D3, HUF76423D3S, HUF76423P3, HUF76423S3S, HUF76429D3

Keywords - HUF76419D3 MOSFET specs

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