2SK2091
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2091
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.3
V
|Id|ⓘ - Maximum Drain Current: 0.005
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 900
Ohm
Package:
MCP
2SK2091
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2091
Datasheet (PDF)
..1. Size:89K sanyo
2sk2091.pdf
Ordering number:ENN4504N-Channel Junction Silicon FET2SK2091Impedance Converter ApplicationsApplications Package Dimensions Low-frequency general-purpose amplifier applica-unit:mmtions.2058 Impedance conversion.[2SK2091] Infrared sensor.0.30.15Features3 Small IGSS.0 to 0.1 Small Ciss. Ultrasmall-sized package permitting 2SK2091-1 20.3
8.1. Size:59K 1
2sk2090.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2090N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGThe 2SK2090 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS (in mm)it can be driven by a voltage as low as 2.5 V and it is not2.1 0.1necessary to consider a drive current, this FET is ideal as an1.25 0.1actuator for low-current portable systems such as headphonestereos and
8.2. Size:293K toshiba
2sk209.pdf
2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications Unit: mm High |Yfs|: |Y | = 15 mS (typ.) at V = 10 V, V = 0 fs DS GS High breakdown voltage: V = -50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance: I = -1 nA (max) at V
8.4. Size:86K rohm
2sk2094.pdf
2SK2094 Transistors 4V Drive Nch MOS FET 2SK2094 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET CPT36.55.12.30.5 Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 0.754) 4V drive. 0.650.92.3(1)Gate5) Drive circuits can be simple. 2.3(1) (2) (3)0.5(2)Drain1.06) Parallel use is ea
8.5. Size:127K rohm
2sk2095n.pdf
TransistorsSmall switching (60V, 10A)2SK2095NFFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Easily designed drive circuits.5) Low VGS(th).6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications94Transistors 2SK2095NFElectric
8.7. Size:1089K kexin
2sk2094-z.pdf
SMD Type MOSFETN-Channel MOSFET2SK2094-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features VDS (V) = 60V ID = 2A0.127 RDS(ON) 0.35 (VGS = 10V)+0.10.80-0.1max RDS(ON) 0.5 (VGS = 4V)+ 0.11 Gate2.3 0.60- 0.1+0.154 .60 -0.152 Drain3 Source Absolute Maximum Ratings Ta = 25Paramete
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