2SK2091 Datasheet and Replacement
Type Designator: 2SK2091
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.005 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 900 Ohm
Package: MCP
2SK2091 substitution
2SK2091 Datasheet (PDF)
2sk2091.pdf

Ordering number:ENN4504N-Channel Junction Silicon FET2SK2091Impedance Converter ApplicationsApplications Package Dimensions Low-frequency general-purpose amplifier applica-unit:mmtions.2058 Impedance conversion.[2SK2091] Infrared sensor.0.30.15Features3 Small IGSS.0 to 0.1 Small Ciss. Ultrasmall-sized package permitting 2SK2091-1 20.3
2sk2090.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2090N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGThe 2SK2090 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS (in mm)it can be driven by a voltage as low as 2.5 V and it is not2.1 0.1necessary to consider a drive current, this FET is ideal as an1.25 0.1actuator for low-current portable systems such as headphonestereos and
2sk209.pdf

2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications Unit: mm High |Yfs|: |Y | = 15 mS (typ.) at V = 10 V, V = 0 fs DS GS High breakdown voltage: V = -50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance: I = -1 nA (max) at V
Datasheet: 2SK2014 , 2SK2015 , 2SK2016 , 2SK2032 , 2SK2046 , 2SK2047 , 2SK2074 , 2SK2083 , K4145 , 2SK2101-01MR , 2SK2108 , 2SJ616 , 2SK1428 , 2SK1429 , 2SK1430 , 2SK1431 , 2SK1432 .
Keywords - 2SK2091 MOSFET datasheet
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