2SK2108 MOSFET Datasheet: N-Ch, 250V, 6A. Full specification with pinout and replacement list

2SK2108 Specs and Replacement

Type Designator: 2SK2108

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO220ML

2SK2108 substitution

- MOSFET ⓘ Cross-Reference Search

2SK2108 datasheet

..1. Size:92K sanyo
2sk2108.pdf pdf_icon

Ordering number ENN4602A N-Channel Silicon MOSFET 2SK2108 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2108] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO ... See More ⇒

..2. Size:214K inchange semiconductor
2sk2108.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2108 DESCRIPTION Drain Current I = 6A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 250 V D... See More ⇒

8.1. Size:361K toshiba
2sk210.pdf pdf_icon

2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications Unit mm VHF Band Amplifier Applications High power gain GPS = 24dB (typ.) (f = 100 MHz) Low noise figure NF = 1.8dB (typ.) (f = 100 MHz) High forward transfer admittance Yfs = 7 mS (typ.) (f = 1 kHz) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating... See More ⇒

8.2. Size:38K nec
2sk2109.pdf pdf_icon

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2109 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2109 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS (in mm) is a switching element that can be directly driven by the output of 4.5 0.1 an IC operating at 5 V. 1.5 0.1 1.6 0.2 This product has a low ON resistance and superb switching characteristics and is ide... See More ⇒