2SJ615 PDF and Equivalents Search

 

2SJ615 Specs and Replacement

Type Designator: 2SJ615

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: PCP

2SJ615 substitution

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2SJ615 datasheet

 ..1. Size:28K  sanyo
2sj615.pdf pdf_icon

2SJ615

Ordering number ENN7179 2SJ615 P-Channel Silicon MOSFET 2SJ615 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ615] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 Gate 0.75 2 Drain 3 Source Specifications SANYO PCP Absolute Maximum Rat... See More ⇒

 9.1. Size:143K  1
2sj618.pdf pdf_icon

2SJ615

2SJ618 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOS ) 2SJ618 High-Power Amplifier Applications Unit mm 15.9 MAX. 3.2 0.2 High breakdown voltage VDSS = -180 V Complementary to 2SK3497 2.0 0.3 1.0 0.3 0.25 5.45 0.2 5.45 0.2 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit 1 2 3 Drain-source v... See More ⇒

 9.2. Size:331K  toshiba
2sj610.pdf pdf_icon

2SJ615

2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( -MOSV) 2SJ610 Switching Regulator, DC-DC Converter and Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 1.85 (typ.) High forward transfer admittance Y = 18 S (typ.) fs Low leakage current I = -100 A (V = -250 V) DSS DS Enhancement-mode V = -1.5 -3.5 V... See More ⇒

 9.3. Size:314K  toshiba
2sj619.pdf pdf_icon

2SJ615

2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications 4-V gate drive Low drain-source ON resistance R = 0.15 (typ.) DS (ON) High forward transfer admittance Y = 7.7 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -10... See More ⇒

Detailed specifications: 2SK1432, 2SK1433, 2SK1434, 2SK1435, 2SK1436, 2SK1437, 2SK1438, 2SK1439, AON6380, 2SK2122, 2SK2123, 2SK2124, 2SK2125, 2SK2126, 2SK2127, 2SK2128, 2SK2129

Keywords - 2SJ615 MOSFET specs

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