HUF76419S3S MOSFET Datasheet: N-Ch, 60V, 27A. Full specification with pinout and replacement list

HUF76419S3S Specs and Replacement

Type Designator: HUF76419S3S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO263AB

HUF76419S3S substitution

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HUF76419S3S datasheet

0.1. Size:213K fairchild semi
huf76419s3st.pdf pdf_icon

HUF76419P3, HUF76419S3S Data Sheet December 2001 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.035 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.040 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect... See More ⇒

5.1. Size:321K fairchild semi
huf76419s f085.pdf pdf_icon

April 2013 HUF76419S3ST_F085 N-Channel Power Trench MOSFET 60V, 29A, 35m D D Features Typ rDS(on) = 26.7m at VGS = 10V, ID = 29A Typ Qg(tot) = 23.7nC at VGS = 10V, ID = 29A G UIS Capability RoHS Compliant G S Qualified to AEC Q101 TO-263AB S MOSFET Maximum Ratings TJ = 25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 60 V ... See More ⇒

6.1. Size:196K fairchild semi
huf76419d3st.pdf pdf_icon

HUF76419D3, HUF76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER G... See More ⇒

6.2. Size:220K fairchild semi
huf76419p3-s3s.pdf pdf_icon