All MOSFET. 2SK2160 Datasheet

 

2SK2160 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK2160
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO220ML

 2SK2160 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2160 Datasheet (PDF)

 ..1. Size:95K  sanyo
2sk2160.pdf

2SK2160 2SK2160

Ordering number:ENN4600AN-Channel Silicon MOSFET2SK2160Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2160] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO

 8.1. Size:131K  toshiba
2sk2162.pdf

2SK2160 2SK2160

 8.2. Size:120K  sanyo
2sk2167.pdf

2SK2160 2SK2160

Ordering number:ENN4631N-Channel Silicon MOSFET2SK2167Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SK2167]4.51.51.60.4 0.53 2 10.41.51 : Gate3.02 : Drain0.753 : SourceSANYO : PCP(Bottom View)SpecificationsAbsolute Maximum Ratings at Ta =

 8.3. Size:88K  sanyo
2sk2169.pdf

2SK2160 2SK2160

Ordering number:ENN4556N-Channel Silicon MOSFET2SK2169Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2087A Low-voltage drive.[2SK2169]2.51.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25CP

 8.4. Size:96K  sanyo
2sk2161.pdf

2SK2160 2SK2160

Ordering number:ENN4601AN-Channel Silicon MOSFET2SK2161Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2161] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO

 8.5. Size:71K  renesas
rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf

2SK2160 2SK2160

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:33K  hitachi
2sk213 2sk214 2sk215 2sk216.pdf

2SK2160 2SK2160

2SK213, 2SK214, 2SK215, 2SK216Silicon N-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed switching.Complementary pair with 2SJ76, J77, J78, J79Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Flange)3. D

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2N6757

 

 
Back to Top