All MOSFET. 2SK2951 Datasheet

 

2SK2951 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2951

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.5 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 Β°C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 18 pF

Maximum Drain-Source On-State Resistance (Rds): 3.5 Ohm

Package: PCP

2SK2951 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK2951 PDF doc:

1.1. 2sk2951.pdf Size:26K _sanyo

2SK2951
2SK2951

Ordering number : ENN6916 2SK2951 N-Channel Silicon MOSFET 2SK2951 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2062A [2SK2951] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP Specifications (Bottom view) Absolute Maximum Ratings at Ta=25°C Parameter Symbo

4.1. 2sk2952.pdf Size:414K _toshiba

2SK2951
2SK2951

2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2952 Chopper Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 0.4 ? (typ.) (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : I = 100 ΅A (max) (V = 400 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D Maximum Rat

4.2. 2sk2953.pdf Size:430K _toshiba

2SK2951
2SK2951

2SK2953 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2953 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.31 ? (typ.) High forward transfer admittance : |Yfs| = 15 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10

4.3. 2sk2958.pdf Size:89K _renesas

2SK2951
2SK2951

2SK2958(L), 2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1058-0400 (Previous: ADE-208-568B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 5.5 m? typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(L)) (Package name: LDPAK(S)-(1)) 4

4.4. rej03g1059_2sk2959ds.pdf Size:97K _renesas

2SK2951
2SK2951

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.5. 2sk2957.pdf Size:84K _renesas

2SK2951
2SK2951

ο»ΏTo all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

4.6. rej03g1058_2sk2958lsds.pdf Size:102K _renesas

2SK2951
2SK2951

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.7. 2sk2955.pdf Size:88K _renesas

2SK2951
2SK2951

2SK2955 Silicon N Channel MOS FET High Speed Power Switching REJ03G1055-0400 (Previous: ADE-208-564B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =0.010 ? typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source 1 S 2 3 R

4.8. 2sk2959.pdf Size:83K _renesas

2SK2951
2SK2951

2SK2959 Silicon N Channel MOS FET High Speed Power Switching REJ03G1059-0500 (Previous: ADE-208-569C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 7 m? typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 S 3 Rev.5.00 Sep 07, 2005 pag

4.9. rej03g1055_2sk2955ds.pdf Size:102K _renesas

2SK2951
2SK2951

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.10. 2sk2956.pdf Size:47K _hitachi

2SK2951
2SK2951

2SK2956 Silicon N Channel MOS FET High Speed Power Switching ADE-208-566B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance RDS(on) = 7m? typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2956 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source v

Datasheet: 2SK2836 , 2SK2859 , 2SK2864 , 2SK2867 , 2SK2909 , 2SK2910 , 2SK2911 , 2SK2919 , IRFP4229 , 2SK2969 , 2SK2987 , 2SK601 , 2SK614 , 2SK615 , 2SK65 , 2SK690 , 2SK758 .

 


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