2SJ188 MOSFET. Datasheet pdf. Equivalent

2SJ188 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ188 Datasheet (PDF)

1.1. 2sj188.pdf Size:82K _sanyo

Ordering number:EN3761A P-Channel Silicon MOSFET 2SJ188 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2083B � Low-voltage drive. [2SJ188] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ188] 6.5 2.3 5.0 0.5 4 0

5.1. 2sj183.pdf Size:118K _upd



5.2. 2sj182l-s.pdf Size:53K _upd



 5.3. 2sj187.pdf Size:99K _sanyo

Ordering number:EN3509A P-Channel Silicon MOSFET 2SJ187 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2062A � Low-voltage drive. [2SJ187] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol

5.4. 2sj189.pdf Size:83K _sanyo

Ordering number:EN3762A P-Channel Silicon MOSFET 2SJ189 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2083B � Low-voltage drive. [2SJ189] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ189] 6.5 2.3 5.0 0.5 4 0

 5.5. 2sj181.pdf Size:87K _renesas

2SJ181(L), 2SJ181(S) Silicon P Channel MOS FET REJ03G0848-0200 (Previous: ADE-208-1183) Rev.2.00 Sep 07, 2005 Description High speed power switching Features � Low on-resistance � High speed switching � Low drive current � No secondary breakdown � Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package code: PRSS

5.6. r07ds0395ej 2sj181ls.pdf Size:103K _renesas

Preliminary Datasheet R07DS0395EJ0300 2SJ181(L), 2SJ181(S) (Previous: REJ03G0848-0200) Rev.3.00 Silicon P Channel MOS FET May 16, 2011 Description High speed power switching Features � Low on-resistance � High speed switching � Low drive current � No secondary breakdown � Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RE

5.7. rej03g0849 2sj186ds.pdf Size:89K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.8. 2sj186.pdf Size:84K _renesas

2SJ186 Silicon P Channel MOS FET REJ03G0849-0200 (Previous: ADE-208-1184) Rev.2.00 Sep 07, 2005 Description High speed power switching Features � Low on-resistance � High speed switching � Low drive current � Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PLZZ0004CA-A R (Package name: UPAK ) D 1 2 1. Gate

5.9. 2sj184.pdf Size:394K _nec

5.10. 2sj185.pdf Size:401K _nec

5.11. 2sj180.pdf Size:373K _nec

5.12. 2sj185.pdf Size:1252K _kexin

SMD Type MOSFET P-Channel MOSFET 2SJ185 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) =-50V 1 2 ● ID =-0.1 A (VGS =-4V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 ● RDS(ON) ＜ 20Ω (VGS =-4V) +0.1 1.9 -0.1 ● RDS(ON) ＜ 40Ω (VGS =-2.5V) ● Comp;ementary to 2SK1399 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symb

5.13. 2sj181s.pdf Size:1211K _kexin

SMD Type MOSFET P-Channel MOSFET 2SJ181S TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features 4 ● VDS (V) =-600V ● ID =-0.5 A (VGS =-10V) 0.127 +0.1 0.80-0.1 max ● RDS(ON) ＜ 25Ω (VGS =-10V) D ● High speed switching G ● Low drive current + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 2 Drain 4 .60 -0.15 3 Source 4 Drain S

5.14. 2sj185-3.pdf Size:1268K _kexin

SMD Type MOSFET P-Channel MOSFET 2SJ185 SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-50V ● ID =-0.1 A (VGS =-4V) 1 2 +0.02 +0.1 ● RDS(ON) ＜ 20Ω (VGS =-4V) 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 ● RDS(ON) ＜ 40Ω (VGS =-2.5V) ● Comp;ementary to 2SK1399 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter S

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