2SJ188 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ188
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 15 V
Maximum Drain Current |Id|: 2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 280 pF
Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm
Package: TP
2SJ188 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ188 Datasheet (PDF)
1.1. 2sj188.pdf 
Size:82K _sanyo
Ordering number:EN3761A P-Channel Silicon MOSFET 2SJ188 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ188] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ188] 6.5 2.3 5.0 0.5 4 0
5.1. 2sj182l-s.pdf Size:53K _upd
5.2. 2sj183.pdf Size:118K _upd
5.3. 2sj187.pdf Size:99K _sanyo
Ordering number:EN3509A P-Channel Silicon MOSFET 2SJ187 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ187] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol
5.4. 2sj189.pdf Size:83K _sanyo
Ordering number:EN3762A P-Channel Silicon MOSFET 2SJ189 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ189] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ189] 6.5 2.3 5.0 0.5 4 0
5.5. r07ds0395ej 2sj181ls.pdf Size:103K _renesas
Preliminary Datasheet R07DS0395EJ0300 2SJ181(L), 2SJ181(S) (Previous: REJ03G0848-0200) Rev.3.00 Silicon P Channel MOS FET May 16, 2011 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RE
5.6. rej03g0849 2sj186ds.pdf Size:89K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
5.7. 2sj186.pdf Size:84K _renesas
2SJ186 Silicon P Channel MOS FET REJ03G0849-0200 (Previous: ADE-208-1184) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PLZZ0004CA-A R (Package name: UPAK ) D 1 2 1. Gate
5.8. 2sj181.pdf Size:87K _renesas
2SJ181(L), 2SJ181(S) Silicon P Channel MOS FET REJ03G0848-0200 (Previous: ADE-208-1183) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package code: PRSS
5.9. 2sj184.pdf Size:394K _nec
5.10. 2sj185.pdf Size:401K _nec
5.11. 2sj180.pdf Size:373K _nec
5.12. 2sj185.pdf Size:1252K _kexin
SMD Type MOSFET P-Channel MOSFET 2SJ185 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) =-50V 1 2 ● ID =-0.1 A (VGS =-4V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 ● RDS(ON) ＜ 20Ω (VGS =-4V) +0.1 1.9 -0.1 ● RDS(ON) ＜ 40Ω (VGS =-2.5V) ● Comp;ementary to 2SK1399 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symb
5.13. 2sj181s.pdf Size:1211K _kexin
SMD Type MOSFET P-Channel MOSFET 2SJ181S TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features 4 ● VDS (V) =-600V ● ID =-0.5 A (VGS =-10V) 0.127 +0.1 0.80-0.1 max ● RDS(ON) ＜ 25Ω (VGS =-10V) D ● High speed switching G ● Low drive current + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 2 Drain 4 .60 -0.15 3 Source 4 Drain S
5.14. 2sj185-3.pdf Size:1268K _kexin
SMD Type MOSFET P-Channel MOSFET 2SJ185 SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-50V ● ID =-0.1 A (VGS =-4V) 1 2 +0.02 +0.1 ● RDS(ON) ＜ 20Ω (VGS =-4V) 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 ● RDS(ON) ＜ 40Ω (VGS =-2.5V) ● Comp;ementary to 2SK1399 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter S
Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .
