HUF76429S3S MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF76429S3S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 110 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 44 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 38 nC
Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm
Package: TO263AB
HUF76429S3S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF76429S3S Datasheet (PDF)
1.1. huf76429s3st.pdf 
Size:206K _update_mosfet
HUF76429P3, HUF76429S3S Data Sheet December 2001 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance DRAIN SOURCE - rDS(ON) = 0.022Ω, VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.025Ω, VGS = 5V • Simulation Models GATE - Temperature Compensated PSPICE® and SABER™ SOURCE Elect
1.2. huf76429s3s.pdf Size:207K _fairchild_semi
HUF76429P3, HUF76429S3S Data Sheet December 2001 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance DRAIN SOURCE - rDS(ON) = 0.022?, VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.025?, VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Electrical Models D
2.1. huf76429d3st.pdf Size:285K _update_mosfet
HUF76429D3, HUF76429D3S Data Sheet February 2005 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features • Ultra Low On-Resistance DRAIN - rDS(ON) = 0.023Ω, VGS = 10V SOURCE (FLANGE) DRAIN - rDS(ON) = 0.027Ω, VGS = 5V GATE • Simulation Models GATE - Temperature Compensated PSPICE® and SABER™ SOURCE Elect
2.2. huf76429d f085.pdf Size:346K _fairchild_semi
HUFA76429D3ST_F085 Data Sheet September 2010 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET® Power MOSFETs Packaging Features • Ultra Low On-Resistance JEDEC TO-252AA - rDS(ON) = 0.023Ω, VGS = 10V - rDS(ON) = 0.027Ω, VGS = 5V DRAIN (FLANGE) • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electriecal Models GATE - Spice and SABER Thermal Im
2.3. huf76429d3-s.pdf Size:288K _fairchild_semi
HUF76429D3, HUF76429D3S Data Sheet February 2005 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN - rDS(ON) = 0.023?, VGS = 10V SOURCE (FLANGE) DRAIN - rDS(ON) = 0.027?, VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Electrical Models D
Datasheet: HUF76419S3S , HUF76423D3 , HUF76423D3S , HUF76423P3 , HUF76423S3S , HUF76429D3 , HUF76429D3S , HUF76429P3 , IRFP260 , HUF76432P3 , HUF76432S3S , HUF76437P3 , HUF76437S3S , HUF76439P3 , HUF76439S3S , HUF76443P3 , HUF76443S3S .
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