All MOSFET. HUF76432S3S Datasheet

 

HUF76432S3S MOSFET. Datasheet pdf. Equivalent

Type Designator: HUF76432S3S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 130 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Drain Current |Id|: 56 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.021 Ohm

Package: TO263AB

HUF76432S3S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HUF76432S3S Datasheet (PDF)

2.1. huf76432p3-s3s.pdf Size:221K _fairchild_semi

HUF76432S3S
HUF76432S3S

HUF76432P3, HUF76432S3S Data Sheet December 2001 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features • Ultra Low On-Resistance SOURCE DRAIN DRAIN (FLANGE) - rDS(ON) = 0.017Ω, VGS = 10V GATE - rDS(ON) = 0.019Ω, VGS = 5V GATE • Simulation Models - Temperature Compensated PSPICE® and SABER™ SOURCE Electr

3.1. huf76437s3st.pdf Size:215K _update_mosfet

HUF76432S3S
HUF76432S3S

HUF76437P3, HUF76437S3S Data Sheet December 2001 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.014Ω, VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.017Ω, VGS = 5V • Simulation Models GATE - Temperature Compensated PSPICE® and SABER™ SOURCE Ele

3.2. huf76439s3st.pdf Size:209K _update_mosfet

HUF76432S3S
HUF76432S3S

HUF76439P3, HUF76439S3S Data Sheet December 2001 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance - rDS(ON) = 0.012Ω, VGS = 10V SOURCE DRAIN - rDS(ON) = 0.014Ω, VGS = 5V DRAIN (FLANGE) GATE • Simulation Models - Temperature Compensated PSPICE® and SABER™ GATE Electrical

 3.3. huf76439s3s.pdf Size:210K _fairchild_semi

HUF76432S3S
HUF76432S3S

HUF76439P3, HUF76439S3S Data Sheet December 2001 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance - rDS(ON) = 0.012?, VGS = 10V SOURCE DRAIN - rDS(ON) = 0.014?, VGS = 5V DRAIN (FLANGE) GATE Simulation Models - Temperature Compensated PSPICE and SABER GATE Electrical Models SOURCE

Datasheet: HUF76423D3S , HUF76423P3 , HUF76423S3S , HUF76429D3 , HUF76429D3S , HUF76429P3 , HUF76429S3S , HUF76432P3 , BF245A , HUF76437P3 , HUF76437S3S , HUF76439P3 , HUF76439S3S , HUF76443P3 , HUF76443S3S , HUF76445P3 , HUF76445S3S .

 
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