HUF76432S3S MOSFET Datasheet: N-Ch, 60V, 56A. Full specification with pinout and replacement list

HUF76432S3S Specs and Replacement

Type Designator: HUF76432S3S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TO263AB

HUF76432S3S substitution

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HUF76432S3S datasheet

6.1. Size:221K fairchild semi
huf76432p3-s3s.pdf pdf_icon

HUF76432P3, HUF76432S3S Data Sheet December 2001 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features Ultra Low On-Resistance SOURCE DRAIN DRAIN (FLANGE) - rDS(ON) = 0.017 , VGS = 10V GATE - rDS(ON) = 0.019 , VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER SOURCE Electr... See More ⇒

7.1. Size:209K fairchild semi
huf76439s3st.pdf pdf_icon

HUF76439P3, HUF76439S3S Data Sheet December 2001 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance - rDS(ON) = 0.012 , VGS = 10V SOURCE DRAIN - rDS(ON) = 0.014 , VGS = 5V DRAIN (FLANGE) GATE Simulation Models - Temperature Compensated PSPICE and SABER GATE Electrical ... See More ⇒

7.2. Size:215K fairchild semi
huf76437s3st.pdf pdf_icon

HUF76437P3, HUF76437S3S Data Sheet December 2001 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.014 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.017 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Ele... See More ⇒

7.3. Size:210K fairchild semi
huf76439s3s.pdf pdf_icon