All MOSFET. 2SK2581 Datasheet

 

2SK2581 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK2581
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 135 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TO220E

 2SK2581 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2581 Datasheet (PDF)

 ..1. Size:34K  panasonic
2sk2581.pdf

2SK2581
2SK2581

Power F-MOS FETs 2SK25812SK2581(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.2 9.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2 5.08

 8.1. Size:104K  renesas
rej03g1020 2sk2586ds.pdf

2SK2581
2SK2581

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:90K  renesas
2sk2586.pdf

2SK2581
2SK2581

2SK2586 Silicon N Channel MOS FET REJ03G1020-0500 (Previous: ADE-208-358C) Rev.5.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. GateG2. Drain(Flange

 8.3. Size:34K  panasonic
2sk2580.pdf

2SK2581
2SK2581

Power F-MOS FETs 2SK25802SK2580(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.2 9.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2 5.08

 8.4. Size:30K  panasonic
2sk2588.pdf

2SK2581
2SK2581

Power F-MOS FETs 2SK25882SK2588Silicon N-Channel Power F-MOSUnit : mm FeaturesHigh-speed switching4.6 0.29.9 0.3 2.9 0.2Low ON-resistance3.2 0.1No secondary breakdownLow-voltage drive2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive5.08 0.4Control equipment1 2 37Swit

 8.5. Size:76K  hitachi
2sk258h.pdf

2SK2581
2SK2581

 8.6. Size:227K  inchange semiconductor
2sk258.pdf

2SK2581
2SK2581

isc N-Channel MOSFET Transistor 2SK258DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current , high speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNIT

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SVSP11N60DD2TR

 

 
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