All MOSFET. HUF76439P3 Datasheet

 

HUF76439P3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HUF76439P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 71 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 84 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO220AB

 HUF76439P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HUF76439P3 Datasheet (PDF)

 6.1. Size:209K  fairchild semi
 huf76439s3st.pdf

HUF76439P3 HUF76439P3

HUF76439P3, HUF76439S3SData Sheet December 200171A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance- rDS(ON) = 0.012, VGS = 10VSOURCEDRAIN- rDS(ON) = 0.014, VGS = 5VDRAIN (FLANGE)GATE Simulation Models- Temperature Compensated PSPICE and SABER GATEElectrical

 6.2. Size:210K  fairchild semi
 huf76439s3s.pdf

HUF76439P3 HUF76439P3

HUF76439P3, HUF76439S3SData Sheet December 200171A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance- rDS(ON) = 0.012, VGS = 10VSOURCEDRAIN- rDS(ON) = 0.014, VGS = 5VDRAIN (FLANGE)GATE Simulation Models- Temperature Compensated PSPICE and SABER GATEElectrical

 7.1. Size:215K  fairchild semi
 huf76437s3st.pdf

HUF76439P3 HUF76439P3

HUF76437P3, HUF76437S3SData Sheet December 200164A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCEDRAIN- rDS(ON) = 0.014, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.017, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEle

 7.2. Size:221K  fairchild semi
 huf76432p3-s3s.pdf

HUF76439P3 HUF76439P3

HUF76432P3, HUF76432S3SData Sheet December 200155A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeatures Ultra Low On-ResistanceSOURCE DRAINDRAIN (FLANGE) - rDS(ON) = 0.017, VGS = 10VGATE- rDS(ON) = 0.019, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER SOURCEElectr

Datasheet: HUF76429D3 , HUF76429D3S , HUF76429P3 , HUF76429S3S , HUF76432P3 , HUF76432S3S , HUF76437P3 , HUF76437S3S , IRF2807 , HUF76439S3S , HUF76443P3 , HUF76443S3S , HUF76445P3 , HUF76445S3S , HUF76609D3 , HUF76609D3S , HUF76619D3 .

 

 
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