2SK1727 Specs and Replacement
Type Designator: 2SK1727
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 22 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: NMP
2SK1727 substitution
- MOSFET ⓘ Cross-Reference Search
2SK1727 datasheet
2sk1727.pdf
Ordering number EN3822 N-Channel Silicon MOSFET 2SK1727 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SK1727] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate 2.54 2.54 SANYO NMP Specifications Absolute Maximum... See More ⇒
2sk1729.pdf
Ordering number EN3824 N-Channel Silicon MOSFET 2SK1729 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SK1729] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate 2.54 2.54 SANYO NMP Specifications Absolute Maximum... See More ⇒
Detailed specifications: 2SK1608, 2SK1609, 2SK1610, 2SK1612, 2SK1613, 2SK1614, 2SK1724, 2SK1725, IRFB4227, 2SK1728, 2SK1729, 2SK1730, 2SK1731, 2SK1732, 2SK1733, 2SK1734, 2SK1735
Keywords - 2SK1727 MOSFET specs
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