2SK1735 Specs and Replacement
Type Designator: 2SK1735
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: FLP
2SK1735 substitution
- MOSFET ⓘ Cross-Reference Search
2SK1735 datasheet
2sk1735.pdf
Ordering number EN3830 N-Channel Silicon MOSFET 2SK1735 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SK1735] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANY... See More ⇒
2sk1739a.pdf
2SK1739A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1739A RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER Unit in mm Output Power Po 90 W (Min.) Drain Efficiency = 50% (Typ.) D Frequency f = 770 MHz Push-Pull Structure Package MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 80 V Gate-Sourc... See More ⇒
2sk1730.pdf
Ordering number EN3825 N-Channel Silicon MOSFET 2SK1730 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SK1730] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate 2.54 2.54 SANYO NMP Specifications Absolute Maximum... See More ⇒
Detailed specifications: 2SK1727, 2SK1728, 2SK1729, 2SK1730, 2SK1731, 2SK1732, 2SK1733, 2SK1734, 7N65, 2SK1737, 2SK1738, 2SK1740, 2SK1747, 2SJ225, 2SJ226, 2SJ227, 2SJ228
Keywords - 2SK1735 MOSFET specs
2SK1735 cross reference
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