2SJ597 Datasheet and Replacement

Ordering number : ENN66702SJ597P-Channel Silicon MOSFET2SJ597DC / DC Converter ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2083B 4V drive.[2SJ597]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SJ597]6.5 2.35.0 0.5

Ordering number : ENN71502SJ591LSP-Channel Silicon MOSFET2SJ591LSDC / DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm 4V drive. 2078C[2SJ591LS]10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Gate2 : Drain3 : SourceSpecifications2.55 2.55Absolute Maximum Ratings at Ta=25CSANYO : TO-220FI(LS)Parameter Symbol Conditio

Ordering number : ENN69772SJ594P-Channel Silicon MOSFET2SJ594DC / DC Converter ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2083B 4V drive.[2SJ594]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3 SANYO : TPunit : mm2092B[2SJ594]6.5 2.3

Ordering number : ENN69792SJ596P-Channel Silicon MOSFET2SJ596DC / DC Converter ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2083B 4V drive.[2SJ596]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3 SANYO : TPunit : mm2092B[2SJ596]6.5 2.3

Ordering number : ENN69782SJ595P-Channel Silicon MOSFET2SJ595DC / DC Converter ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2083B 4V drive.[2SJ595]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3 SANYO : TPunit : mm2092B[2SJ595]6.5 2.3

Ordering number : ENN71492SJ590LSP-Channel Silicon MOSFET2SJ590LSDC / DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm 4V drive. 2078C[2SJ590LS]10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Gate2 : Drain3 : SourceSpecifications2.55 2.55Absolute Maximum Ratings at Ta=25CSANYO : TO-220FI(LS)Parameter Symbol Conditio

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ598SWITCHING P-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SJ598 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ598 TO-251 (MP-3)2SJ598-Z TO-252 (MP-3Z)FEATURES Low on-state resistance: RDS(on)1 = 130 m MAX. (VGS = 10 V, ID = 6 A) RDS(on

PRELIMINARY DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ599SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SJ599 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor solenoid, motor and lamp driver.2SJ599 TO-2512SJ599-Z TO-252FEATURES Low on-state resistance:RDS(on)1 = 75 m MAX. (VGS = 10 V, ID = 10 A)

SMD TypeSMD TypeSMD TypeSMD TypeProduct specification2SJ599FeaturesTO-252Low on-resistanceUnit: mm+0.15 +0.16.50-0.15 2.30-0.1RDS(on)1 =75m MAX. (VGS =-10 V, ID =-10A)5.30+0.2 0.50+0.8-0.2 -0.7RDS(on)2 = 110 m MAX. (VGS =-4.0V, ID =-10 A)Low Ciss: Ciss = 1300 pF TYP.Built-in gate protection diode 0.1270.80+0.1 max-0.11Gate+0.12.3 0.60-0.12Drain4.6

SMD Type MOSFETP-Channel MOSFET2SJ598-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features VDS (V) =-60V ID =-12 A0.127 RDS(ON) 130m (VGS =-10V)+0.10.80-0.1max RDS(ON) 190m (VGS =-4V) Low Ciss: Ciss = 720 pF (TYP.)+ 0.12.3 0.60- 0.11 Gate+0.154 .60 -0.152 DrainDrain 3 SourceBod

SMD Type MOSFETP-Channel MOSFET2SJ599-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features VDS (V) =-60V ID =-20A0.127 RDS(ON) 75m (VGS =-10V)+0.10.80-0.1max RDS(ON) 111m (VGS =-4V) Low Ciss: Ciss = 1300 pF (TYP.)+ 0.12.3 0.60- 0.11 Gate+0.154.60 -0.152 Drain3 SourceDrainBody

2SJ598-Z-E1www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S

isc P-Channel MOSFET Transistor 2SJ598FEATURESStatic drain-source on-resistance:RDS(on)130mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBuilt in gate protection diodeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage -60 VDSSV