2SK1867 Datasheet and Replacement

Power F-MOS FETs 2SK18672SK1867Silicon N-Channel Power F-MOSUnit : mm5.0 0.1 Features10.0 0.2 1.0Avalanche energy capability guaranteed : EAS >15mJVGSS= 30V guaranteed90High-speed switching: tf = 26ns 1.2 0.1 C1.0No secondary breakdown2.25 0.2Radial taping possible0.65 0.10.35 0.1 1.05 0.10.55 0.1 Applications0.55 0.1Non-contact rela

Power F-MOS FETs 2SK18682SK1868Silicon N-Channel Power F-MOS FeaturesUnit : mm5.0 0.1Avalanche energy capability guaranteed : EAS > 62.5mJ10.0 0.2 1.0Low ON-resistance RDS(on) : RDS(on)1= 0.13590High-speed switching : tf= 53nsNo secondary breakdown1.2 0.1 C1.0 2.25 0.2Low-voltage drive possible(VGS= 4V)0.65 0.1Radial taping possible0.35 0.1 1.0

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1824N-CHANNEL MOS FETFOR SWITCHINGThe 2SK1824 is a N-channel vertical type MOS FET that isPACKAGE DIMENSIONS (in mm)driven at 2.5 V.0.3 0.05 0.1+0.10.05Because this MOS FET can be driven on a low voltage andbecause it is not necessary to consider the drive current, the2SK1824 is ideal for driving the actuator of power-saving

2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Unit: mm Analog Switch Applications 2.5 V gate drive Low threshold voltage: V = 0.5~1.5 V th High speed Enhancement-mode Small package Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA Characteristics S

2SK1827 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1827 High Speed Switching Applications Unit: mm Analog Switch Applications 4 V gate drive Low threshold voltage: V = 0.8~2.5 V th High speed Enhancement-mode Small package Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70Characteristics Sy

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2SK1825 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1825 High Speed Switching Applications Unit: mm Analog Switch Applications 4 V gate drive Low threshold voltage: V = 0.8~2.5 V th High speed Enhancement-mode Small package Equivalent Circuit JEDEC Maximum Ratings (Ta == 25C) ==JEITA Characteristics Symbol Rat

2SK1828 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1828 High Speed Switching Applications Unit: mm Analog Switch Applications 2.5 V gate drive Low threshold voltage: V = 0.5~1.5 V th High speed Enhancement-mode Small package Marking Equivalent CircuitJEDEC TO-236MODJEITA SC-59TOSHIBA 2-3F1FWeight: 0.012 g (typ.) Maximum Ra

2SK1826 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Unit: mm Analog Switch Applications 4 V gate drive Low threshold voltage: V = 0.8~2.5 V th High speed Enhancement-mode Small package Marking Equivalent CircuitJEDEC TO-236MODMaximum Ratings (Ta == 25C) ==JEITA SC-59Characteristi

2SK1829 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 High Speed Switching Applications Unit: mm Analog Switch Applications 2.5 V gate drive Low threshold voltage: V = 0.5~1.5 V th High speed Enhancement-mode Small package Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70Characteristics

2SK184 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK184 Low Noise Audio Amplifier Applications Unit: mm High |Yfs|: |Y | = 15 mS (typ.) (V = 10 V, V = 0) fs DS GS High breakdown voltage: V = -50 V GDS Low noise: NF = 1.0dB (typ.) (V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k) DS D G High input impedance: I = -1 nA (max) (V = -30 V) GS

2SK1875 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK1875 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications High |Yfs|: |Yfs| = 25 mS (typ.) Low C : C = 7.5 pF (typ.) iss issMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitGate-drain voltage

Ordering number:EN4500N-Channel Silicon MOSFET2SK1848Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SK1848]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter S

Ordering number:EN4645N-Channel Silicon MOSFET2SK1890Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2090A Low-voltage drive.[2SK1890] Surface mount type device making the following10.24.51.3possible. Reduction in the number of manufacturing pro-cesses for 2SK1890-applied equipm

Ordering number:EN4206N-Channel Silicon MOSFET2SK1891Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SK1891] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SK1891-applied equipm

Ordering number:EN4208N-Channel Silicon MOSFET2SK1897Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK1897] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO :

Ordering number:EN4505N-Channel Silicon MOSFET2SK1847Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SK1847]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter S

Ordering number:EN4203N-Channel Silicon MOSFET2SK1886Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK1886] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO :

Ordering number:EN4209N-Channel Silicon MOSFET2SK1898Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SK1898] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SK1898-applied equipm

Ordering number:EN4177N-Channel Silicon MOSFET2SK1813High-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2089 Converters.[2SK1813]10.24.51.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : TO-220MFSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Co

Ordering number:EN4205N-Channel Silicon MOSFET2SK1889Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SK1889] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SK1889-applied equipm

Ordering number:EN4635N-Channel Enhancement Silicon MOSFET2SK1840Analog Switch ApplicationsFeatures Package Dimensions Large yfs.unit:mm Enhancement type.2024B Low ON resistance.[2SK1840]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Drain3 : SourceSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi

Ordering number:EN4646N-Channel Silicon MOSFET2SK1887Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK1887] Micaless package facilitating easy mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SAN

Ordering number:EN4636N-Channel Enhancement Silicon MOSFET2SK1841Ultrahigh-Speed Switching,Analog Switch ApplicationsFeatures Package Dimensions Large yfs.unit:mm Enhancement type.2040A Low ON resistance.[2SK1841]2.24.00.40.50.40.41 2 31 : Drain1.3 1.32 : Source3 : Gate3.0SANYO : SPA3.8nomSpecificationsAbsolute Maximum Ratings

Ordering number:EN4501N-Channel Silicon MOSFET2SK1849Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SK1849]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter S

Ordering number:EN4207N-Channel Silicon MOSFET2SK1895Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK1895] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO :

Ordering number:EN4204N-Channel Silicon MOSFET2SK1888Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK1888] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO :

Ordering number:EN4648N-Channel Silicon MOSFET2SK1899Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2090A Low-voltage drive.[2SK1899] Surface mount type device making the following10.24.51.3possible. Reduction in the assembling time for 2SK1899-applied equipment. High-densi

Ordering number:EN4634N-Channel Enhancement Silicon MOSFET2SK1839Analog Switch ApplicationsFeatures Package Dimensions Ultrasmall-sized package permitting 2SK1839-unit:mmapplied sets to be made small and slim.2057A Large yfs.[2SK1839] Enhancement type. Low ON resistance.0.30.1530 to 0.11 20.3 0.60.65 0.650.92.01 : Gate2 : Drain3

Ordering number:EN4647N-Channel Silicon MOSFET2SK1896DC-DC Converter, Motor Drive ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK1896] Micaless package facilitating easy mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55

2SK1837 Silicon N Channel MOS FET REJ03G0979-0200 (Previous: ADE-208-1326) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A(Package name: TO-3PL)DG

2SK1808 Silicon N Channel MOS FET REJ03G0975-0200 (Previous: ADE-208-1322) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1807 Silicon N Channel MOS FET REJ03G0974-0200 (Previous: ADE-208-1321) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D

2SK1859 Silicon N Channel MOS FET REJ03G0981-0200 (Previous: ADE-208-1328) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D1. GateG2. Dr

2SK1838(L), 2SK1838(S) Silicon N Channel MOS FET REJ03G0980-0300 Rev.3.00 Nov 21, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package code: PRSS0004ZD-C(Pack

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1835 Silicon N Channel MOS FET REJ03G0978-0300 (Previous: ADE-208-1325) Rev.3.00 Apr 27, 2006 Application High speed power switching Features High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1880(L), 2SK1880(S) Silicon N Channel MOS FET REJ03G0983-0200 (Previous: ADE-208-1331) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package code: PRSS0004ZD-C(Package name: DPAK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1832 Silicon N Channel MOS FET REJ03G0977-0200 (Previous: ADE-208-1324) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D

Power F-MOS FETs 2SK18332SK1833Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Avalanche energy capability guaranteed : EAS > 90mJ5.5 0.2 2.7 0.2VGSS=30V guaranteedHigh-speed switching : tf= 30ns3.1 0.1No secondary breakdown Applications1.3 0.2 1.4 0.1Non-contact relaySolenoid drive+0.20.5 -0.10.8 0.1Motor driveControl

Power F-MOS FETs 2SK18032SK1803Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 60mJ15.0 0.3 5.0 0.2VGSS=30V guaranteed 11.0 0.2 3.2High-speed switching : tf= 80ns3.2 0.1No secondary breakdown Applications2.0 0.22.0 0.1Non-contact relay1.1 0.1 0.6 0.2Solenoid drive5.45 0.3Motor drive10.9 0

Power F-MOS FETs 2SK18342SK1834Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Avalanche energy capability guaranteed : EAS > 15mJ5.5 0.2 2.7 0.2VGSS=30V guaranteedHigh-speed switching : tf = 25ns3.1 0.1No secondary breakdown Applications1.3 0.2 1.4 0.1Non-contact relaySolenoid drive+0.20.5 -0.10.8 0.1Motor driveContro

Silicon Junction FETs (Small Signal) 2SK18422SK1842Silicon N-Channel JunctionUnit : mmFor impedance conversion in low frequency+0.22.8 0.3For infrared sensor +0.250.65 0.15 1.5 0.05 0.65 0.15 Features1 Low gate-source leakage current, IGSS Small capacitance of Ciss, Coss, Crss3 Downsizing of sets by mini-type package and automatic insertion by2taping/ma

Power F-MOS FETs 2SK18462SK1846Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 20mJ3.4 0.38.5 0.26.0 0.5 1.0 0.1VGSS=30V guaranteedHigh-speed switching : tf= 35nsNo secondary breakdown1.5max. 1.1max. FeaturesNon-contact relay0.8 0.1 0.5max.Solenoid drive2.54 0.3Motor drive5.08 0.5Control equipm

N-channel MOS-FET2SK1821-01MFAP-IIA Series 600V 6,5 2A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv

2SK1831, 2SK1832Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converterOutline2SK1831, 2SK1832Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage K1831 VDSS 450 VK1832 500G

2SK1836, 2SK1837Silicon N Channel MOS FETApplicationTO3PLHigh speed power switchingFeatures Low onresistance High speed switching Low drive current2 No secondary breakdown Suitable for switchingregulator, DCDC11converter231. Gate2. Drain (Flange)Table 1 Ordering Information3. Source3Type No VDSS

SMD Type MOSFETN-Channel MOSFET2SK1828SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 50mA1 2 RDS(ON) 40 (VGS = 2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 Low threshold voltage: Vth = 0.5~1.5 V1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-So

SMD Type MOSFETN-Channel MOSFET2SK1828SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features VDS (V) = 20V1 2 ID = 50mA+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 40 (VGS = 2.5V) Low threshold voltage: Vth = 0.5~1.5 V1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source V

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1855 DESCRIPTION Drain Current ID=12A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) Fast Switching Speed APPLICATIONS Switching power supply ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage 30 V

isc N-Channel MOSFET Transistor 2SK1876DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSFast Switching SpeedLow on-resistanceFor switchinggregulator,DC-DC ConverterMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)a

isc N-Channel MOSFET Transistor 2SK1833DESCRIPTIONDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDiving circuit for a solenoid and motorControl equipmentSwitching power supplyABSOLUTE MAXIMUM RATINGS(T =25)aSY

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor 2SK1837FEATURESWith TO-3PL packageLow input capacitance and gate chargeHigh speed switchingLow gate input resistanceNo secondary breakdown100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower

isc N-Channel MOSFET Transistor 2SK1805DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSChopper regulator and motor driveABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1879 DESCRIPTION Drain Current ID=45A@ TC=25 Drain Source Voltage- : VDSS= 60V(Min) Fast Switching Speed APPLICATIONS Switching power supply ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage 30 V I

isc N-Channel MOSFET Transistor 2SK1809DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedLow on-resistanceFor switchinggregulator,DC-DC ConverterMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)a

isc N-Channel MOSFET Transistor 2SK1821DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSChopper regulator and motor driveDC-DC convertersUPSABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc N-Channel MOSFET Transistor 2SK1807DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh Breakdown VoltageABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0) 900 VDS

isc N-Channel MOSFET Transistor 2SK1803DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSContactless relayDiving circuit for a solenoidDriving circuit for a motorControl equipmentSwitching power supply

isc N-Channel MOSFET Transistor 2SK1819DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSChopper regulatorMotor driveInvertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

isc N-Channel MOSFET Transistor 2SK1834DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDiving circuit for a solenoid and motorControl equipmentSwitching power supplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO