All MOSFET. 2SJ265 Datasheet

 

2SJ265 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ265

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 600 pF

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: TO220ML

2SJ265 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ265 Datasheet (PDF)

1.1. 2sj265.pdf Size:106K _sanyo

2SJ265
2SJ265

Ordering number:EN4235 P-Channel Silicon MOSFET 2SJ265 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ265] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

5.1. 2sj268.pdf Size:100K _sanyo

2SJ265
2SJ265

Ordering number:EN4237 P-Channel Silicon MOSFET 2SJ268 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ268] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ268-applied equipment. Hig

5.2. 2sj264.pdf Size:101K _sanyo

2SJ265
2SJ265

Ordering number:EN4746 P-Channel Silicon MOSFET 2SJ264 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ264] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-2

 5.3. 2sj267.pdf Size:91K _sanyo

2SJ265
2SJ265

Ordering number:EN4747 P-Channel Silicon MOSFET 2SJ267 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2090A Low-voltage drive. [2SJ267] Surface mount type device making the following 10.2 4.5 1.3 possible. Reduction in the assembling time for 2SJ267- applied equipment. High-density surface m

5.4. 2sj263.pdf Size:103K _sanyo

2SJ265
2SJ265

Ordering number:EN4234 P-Channel Silicon MOSFET 2SJ263 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ263] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

 5.5. 2sj266.pdf Size:107K _sanyo

2SJ265
2SJ265

Ordering number:EN4236 P-Channel Silicon MOSFET 2SJ266 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ266] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ266-applied equipment. Hig

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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